| No. |
Part Name |
Description |
Manufacturer |
| 181 |
MAX3946ETG+T |
1Gbps to 11.3Gbps, SFP+ Laser Driver with Laser Impedance Mismatch Tolerance |
MAXIM - Dallas Semiconductor |
| 182 |
MD5219G |
Green LED modulite (recommended for LCD backlight). Max. luminous intensity at 20mA 11.0mcd. Typ. forward voltage at 20mA 4.50V. |
Gilway Technical Lamp |
| 183 |
MMBZ5241B |
Surface mount zener diode. Nominal zener voltage 11.0V, test current 20.0mA. |
Jinan Gude Electronic Device |
| 184 |
MMDF3200Z |
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS |
Motorola |
| 185 |
MMSF3300-D |
Power MOSFET 11.5 Amps, 30 Volts N-Channel SO-8 |
ON Semiconductor |
| 186 |
MZ941 |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 187 |
MZ941A |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 188 |
MZ941B |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 189 |
MZ942 |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 190 |
MZ942A |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 191 |
MZ942B |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 192 |
MZ943 |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 193 |
MZ943A |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 194 |
MZ943B |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 195 |
MZ944 |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 196 |
MZ944A |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 197 |
MZ944B |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 198 |
NCP45520 |
NCP45520 & NCP45521 Datasheet - ecoSWITCH Advanced Load Management: 11.5A Integrated Load Switch w/ Ultra-Low RON, VIN Range= 0.5V-13.5V, Power Good Out or Adj. Slew Rate, Adj. Discharge, & Fault Protection |
ON Semiconductor |
| 199 |
NGA-686 |
DC-6000 MHz, cascadable 50 ohm GaAs HBT MMIC amplifier. 11.4dB gain, 19.2 dBm P1dB at 1950MHz. |
Stanford Microdevices |
| 200 |
NGA-689 |
DC-5000 MHz, cascadable 50 ohm(1.4:1 VSRM) GaAs HBT MMIC amplifier. 11.7dB gain, 18.9 dBm P1dB at 1950MHz. |
Stanford Microdevices |
| 201 |
NTE141A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 11.5V. Zener test current Izt = 22.0mA. |
NTE Electronics |
| 202 |
NTE5074A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 11.0V. Zener test current Izt = 23.0mA. |
NTE Electronics |
| 203 |
NTE5080A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 22V. Zener test current Izt = 11.5mA. |
NTE Electronics |
| 204 |
NTE5253AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 11.0V. Zener test current Izt = 1100mA. |
NTE Electronics |
| 205 |
NTMS4873NF |
30 V, 11.7 A, N-Channel, SO-8 |
ON Semiconductor |
| 206 |
NTMS4916N |
Power MOSFET, 30 V, 11.6 A, N-Channel |
ON Semiconductor |
| 207 |
NTTFS5820NL |
Power MOSFET, 60 V, 37 A, 11.5 mΩ |
ON Semiconductor |
| 208 |
NVTFS5820NL |
Power MOSFET, 60 V, 11.5 mΩ, Single N-Channel |
ON Semiconductor |
| 209 |
P6KE13A |
Diode TVS Single Uni-Dir 11.1V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 210 |
P6KE13CA |
Diode TVS Single Bi-Dir 11.1V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
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