No. |
Part Name |
Description |
Manufacturer |
151 |
2N334A |
Trans GP BJT PNP 45V 0.03A 6-Pin LCC-2 |
New Jersey Semiconductor |
152 |
2N3502 |
Trans GP BJT PNP 45V 3-Pin TO-39 |
New Jersey Semiconductor |
153 |
2N3502SP |
Trans GP BJT PNP 45V 3-Pin TO-39 |
New Jersey Semiconductor |
154 |
2N3504 |
Trans GP BJT PNP 45V 3-Pin TO-18 Box |
New Jersey Semiconductor |
155 |
2N3642 |
Trans GP BJT NPN 45V 0.5A |
New Jersey Semiconductor |
156 |
2N3700 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
157 |
2N3700UB |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
158 |
2N5031 |
NPN silicon high frequency transistor 2.5dB - 450MHz |
Motorola |
159 |
2N5032 |
NPN silicon high frequency transistor 3.0dB - 450MHz |
Motorola |
160 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
161 |
2N6121 |
40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. |
Continental Device India Limited |
162 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
163 |
2N6121 |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
164 |
2N6121A |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
165 |
2N6121B |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
166 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
167 |
2N6124 |
Trans GP BJT PNP 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
168 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
169 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
170 |
2N6581 |
Trans GP BJT NPN 450V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
171 |
2N6705 |
0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
172 |
2N6708 |
0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
173 |
2N6752 |
Trans GP BJT NPN 450V 10A |
New Jersey Semiconductor |
174 |
2N6761 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
175 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
176 |
2N6762 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
177 |
2N6769 |
N-Channel Power MOSFETs/ 12A/ 450V/500V |
Fairchild Semiconductor |
178 |
2N6770 |
N-Channel Power MOSFETs/ 12A/ 450V/500V |
Fairchild Semiconductor |
179 |
2N6833 |
Trans GP BJT NPN 450V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
180 |
2N6834 |
Trans GP BJT NPN 450V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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