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Datasheets for 45

Datasheets found :: 2908
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No. Part Name Description Manufacturer
151 2N334A Trans GP BJT PNP 45V 0.03A 6-Pin LCC-2 New Jersey Semiconductor
152 2N3502 Trans GP BJT PNP 45V 3-Pin TO-39 New Jersey Semiconductor
153 2N3502SP Trans GP BJT PNP 45V 3-Pin TO-39 New Jersey Semiconductor
154 2N3504 Trans GP BJT PNP 45V 3-Pin TO-18 Box New Jersey Semiconductor
155 2N3642 Trans GP BJT NPN 45V 0.5A New Jersey Semiconductor
156 2N3700 Chip Type 2C3019 Geometry 4500 Polarity PNP Semicoa Semiconductor
157 2N3700UB Chip Type 2C3019 Geometry 4500 Polarity PNP Semicoa Semiconductor
158 2N5031 NPN silicon high frequency transistor 2.5dB - 450MHz Motorola
159 2N5032 NPN silicon high frequency transistor 3.0dB - 450MHz Motorola
160 2N5786 Silicon N-P-N epitaxial-base transistor. 45V, 10W. General Electric Solid State
161 2N6121 40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. Continental Device India Limited
162 2N6121 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. General Electric Solid State
163 2N6121 Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
164 2N6121A Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
165 2N6121B Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
166 2N6124 40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. Continental Device India Limited
167 2N6124 Trans GP BJT PNP 45V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
168 2N6397 12A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
169 2N6403 16A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
170 2N6581 Trans GP BJT NPN 450V 10A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
171 2N6705 0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE Continental Device India Limited
172 2N6708 0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE Continental Device India Limited
173 2N6752 Trans GP BJT NPN 450V 10A New Jersey Semiconductor
174 2N6761 N-Channel Power MOSFETs/ 4.5A/ 450V/500V Fairchild Semiconductor
175 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
176 2N6762 N-Channel Power MOSFETs/ 4.5A/ 450V/500V Fairchild Semiconductor
177 2N6769 N-Channel Power MOSFETs/ 12A/ 450V/500V Fairchild Semiconductor
178 2N6770 N-Channel Power MOSFETs/ 12A/ 450V/500V Fairchild Semiconductor
179 2N6833 Trans GP BJT NPN 450V 8A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
180 2N6834 Trans GP BJT NPN 450V 8A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor


Datasheets found :: 2908
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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