| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6835 |
Trans GP BJT NPN 450V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 182 |
2N6837 |
Trans GP BJT NPN 450V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 183 |
2N7002BKM |
60 V, 450 mA N-channel Trench MOSFET |
Nexperia |
| 184 |
2N7002BKM |
60 V, 450 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 185 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 186 |
2N930 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 187 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 188 |
2N935 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 189 |
2N936 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 190 |
2N937 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 191 |
2N938 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 192 |
2N939 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 193 |
2N939A |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 194 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 195 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 196 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 197 |
2SC3563 |
10A; 40W; V(ceo): 450V; NPN transistor. For switching regulation |
TOSHIBA |
| 198 |
2SC454 |
Silicon NPN Epitaxial LTP Transistor, intended for use in MW Frequency Converter, 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 199 |
2SD633P |
V(cbo): 100V; V(ceo): 85V; V(ebo): 6V; 6A; 60W; epitaxial planar silicon transistor. For 85V/6A, AF 35 to 45W output applications |
SANYO |
| 200 |
30CLJCQ045 |
30A 45V Hi-Rel Schottky Common Cathode Diode in a Ceramic Lid SMD-0.5 package DLA Number 1N7064CCU3C |
International Rectifier |
| 201 |
30CLJCQ045SCS |
30A 45V Hi-Rel Schottky Common Cathode Diode in a Ceramic Lid SMD-0.5 package DLA Number 1N7064CCU3C |
International Rectifier |
| 202 |
30CLJQ045 |
30A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package |
International Rectifier |
| 203 |
30CLJQ045SCS |
30A 45V Hi-Rel Schottky Common Cathode Diode in a Metallic Lid SMD-0.5 package DLA Number 1N7064CCU3 |
International Rectifier |
| 204 |
30FQ045 |
V(rrm): 45V; 30A schottky power rectifier |
International Rectifier |
| 205 |
30FQ045 |
Diode Schottky 45V 30A 2-Pin DO-4 |
New Jersey Semiconductor |
| 206 |
30KP45 |
Diode TVS Single Uni-Dir 45V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 207 |
30KP45A |
Diode TVS Single Uni-Dir 45V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 208 |
30KP45C |
Diode TVS Single Bi-Dir 45V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 209 |
30KP45CA |
Diode TVS Single Bi-Dir 45V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 210 |
30KPA45 |
Diode TVS Single Uni-Dir 45V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
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