No. |
Part Name |
Description |
Manufacturer |
151 |
K4E660812B-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
152 |
K4E660812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
153 |
K4E660812C-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
154 |
K4E660812C-TC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
155 |
K4E660812C-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
156 |
K4E661612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
157 |
K4E661612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
158 |
K4F640811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
159 |
K4F640811B-TC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
160 |
K4F641612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
161 |
K4F641612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
162 |
K4F641612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
163 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
164 |
K4F660811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
165 |
K4F660811B-TC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
166 |
K4F661612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
167 |
K4F661612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
168 |
K4F661612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
169 |
K4F661612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
170 |
KM416C1004BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
171 |
KM416C1004BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
172 |
KM416C1004BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
173 |
KM416C1004BT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
174 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
175 |
KM416C1004CJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
176 |
KM416C1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
177 |
KM416C1004CT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
178 |
KM416C1004CT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
179 |
KM416C1004CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
180 |
KM416C1204BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
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