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Datasheets for 45N

Datasheets found :: 451
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 KM416C1204BJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
182 KM416C1204BT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
183 KM416C1204BT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
184 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
185 KM416C1204CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
186 KM416C1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
187 KM416C1204CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
188 KM416C1204CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
189 KM416C1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
190 KM416C4000BS-45 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 45ns Samsung Electronic
191 KM416C4100BS-45 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 45ns Samsung Electronic
192 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
193 KM416V1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
194 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
195 KM416V1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
196 KM416V1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
197 KM416V1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
198 KM416V1204CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
199 KM416V1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
200 KM416V4000BS-45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
201 KM416V4000BS-L45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
202 KM416V4000CS-45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
203 KM416V4000CS-L45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
204 KM416V4004BS-45 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Samsung Electronic
205 KM416V4004CS-45 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Samsung Electronic
206 KM416V4004CS-L45 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Samsung Electronic
207 KM416V4100BS-45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
208 KM416V4100BS-L45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
209 KM416V4100CS-45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
210 KM416V4100CS-L45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic


Datasheets found :: 451
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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