| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5398 |
Diode 800V 1.5A Automotive 2-Pin DO-15 |
New Jersey Semiconductor |
| 152 |
1N5398 |
1.5A Silicon Rectifier 800V |
RCA Solid State |
| 153 |
1N5398B |
1.5A, 800V ultra fast recovery rectifier |
MCC |
| 154 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
| 155 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
| 156 |
1N5398GP |
1.5A, 800V ultra fast recovery rectifier |
MCC |
| 157 |
1N5407 |
V(rrm): 800V; 3A medium power silicon rectifier diode |
International Rectifier |
| 158 |
1N5407 |
3 AMPS, 800 Volts Silicon Rectifier |
ITT Semiconductors |
| 159 |
1N5407 |
3.0A, 800V ultra fast recovery rectifier |
MCC |
| 160 |
1N5407 |
Rectifier Diode 800V 3A |
Motorola |
| 161 |
1N5407 |
Diode 800V 3A 2-Pin DO-201AD |
New Jersey Semiconductor |
| 162 |
1N5407 |
3A 800V Standard Recovery Rectifier |
ON Semiconductor |
| 163 |
1N5407G |
Diode Switching 800V 3A 2-Pin DO-201AD |
New Jersey Semiconductor |
| 164 |
1N5407GP |
3.0A, 800V ultra fast recovery rectifier |
MCC |
| 165 |
1N5407RL |
3A 800V Standard Recovery Rectifier |
ON Semiconductor |
| 166 |
1N5553 |
5A standard recovery rectifier diode, 800V |
Semtech |
| 167 |
1N5620 |
Diode Switching 800V 1A 2-Pin GPR-1A |
New Jersey Semiconductor |
| 168 |
1N5620GP |
Diode Switching 800V 1A 2-Pin DO-15 |
New Jersey Semiconductor |
| 169 |
1N5620GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 800V |
Vishay |
| 170 |
1N5621 |
Diode Switching 800V 2A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 171 |
1N5621A |
Diode Switching 800V 2A 2-Pin Case G-2 |
New Jersey Semiconductor |
| 172 |
1N5621GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 800V |
Vishay |
| 173 |
1N5627GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 800V |
Vishay |
| 174 |
1N597 |
Silicon Rectifier Diode 800V 0.125A |
Motorola |
| 175 |
1N6483 |
Surface Mount Glass Passivated Junction Rectifiers, Forward Current 1.0A, Rev. Voltage 800V |
Vishay |
| 176 |
1N662 |
Diode Switching 80V 0.15A 2-Pin DO-35 |
New Jersey Semiconductor |
| 177 |
1N662A |
Diode Switching 80V 0.15A 2-Pin DO-35 |
New Jersey Semiconductor |
| 178 |
1N662B |
Diode Switching 80V 0.15A 2-Pin DO-35 |
New Jersey Semiconductor |
| 179 |
1N663 |
Diode Switching 80V 0.15A 2-Pin DO-35 |
New Jersey Semiconductor |
| 180 |
1N663A |
Diode Switching 80V 0.15A 2-Pin DO-35 |
New Jersey Semiconductor |
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