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Datasheets for 80

Datasheets found :: 9899
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No. Part Name Description Manufacturer
181 1S1891 Silicon diffused junction rectifier 1.2A 800V TOSHIBA
182 1S1891-2C2 Rectifier stack, 800V 2.4A TOSHIBA
183 1S1891-3A2 Rectifier stack, 800V TOSHIBA
184 1S1891-4B2 Rectifier stack, 800V TOSHIBA
185 1S1891-6A2 Rectifier stack, 800V TOSHIBA
186 1S2234 Silicon diffused junction rectifier 1.5A 800V TOSHIBA
187 1S2580 Silicon diffused junction rectifier 1A 800V TOSHIBA
188 1S2586 Silicon diffused junction rectifier 3A 800V TOSHIBA
189 1U1G GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) Panjit International Inc
190 1U2G GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) Panjit International Inc
191 1U3G GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) Panjit International Inc
192 1U4G GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) Panjit International Inc
193 1U5G GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) Panjit International Inc
194 1U6G GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) Panjit International Inc
195 2020-800 Delay 800 +/-16 ns, fixed SIP delay line Tr Data Delay Devices Inc
196 20PM8AC 20A Single Phase Avalanche Controlled Rectifier Bridge 800V IPRS Baneasa
197 20SI8 20A 800V Silicon Rectifier Diode IPRS Baneasa
198 20SI8R 20A 800V Silicon Rectifier Diode, reverse polarity IPRS Baneasa
199 250JB8L V(rrm): 800V; 25A rectifier bridge International Rectifier
200 25LC12 Silicon diffused junction rectifier 25A 800V TOSHIBA
201 25LF11 Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW TOSHIBA
202 274.010 MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/100. Nominal resistance cold 80.0 Ohms. Voltage rating 125. Military QPL type (FM02). Littelfuse
203 2KBP08 Diode Rectifier Bridge Single 800V 2A 4-Pin D-44 New Jersey Semiconductor
204 2KBP08-1 Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBP New Jersey Semiconductor
205 2KBP08M Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBP New Jersey Semiconductor
206 2N1073A PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V Motorola
207 2N1722A Trans GP BJT NPN 80V 5A 3-Pin TO-53 New Jersey Semiconductor
208 2N1724 Trans GP BJT NPN 80V 5A 3-Pin TO-61 New Jersey Semiconductor
209 2N174 Trans GP BJT NPN 80V 5A 3-Pin TO-61 New Jersey Semiconductor
210 2N1768 Trans GP BJT NPN 80V 5A 3-Pin TO-61 New Jersey Semiconductor


Datasheets found :: 9899
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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