No. |
Part Name |
Description |
Manufacturer |
181 |
1S1891 |
Silicon diffused junction rectifier 1.2A 800V |
TOSHIBA |
182 |
1S1891-2C2 |
Rectifier stack, 800V 2.4A |
TOSHIBA |
183 |
1S1891-3A2 |
Rectifier stack, 800V |
TOSHIBA |
184 |
1S1891-4B2 |
Rectifier stack, 800V |
TOSHIBA |
185 |
1S1891-6A2 |
Rectifier stack, 800V |
TOSHIBA |
186 |
1S2234 |
Silicon diffused junction rectifier 1.5A 800V |
TOSHIBA |
187 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
188 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
189 |
1U1G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
190 |
1U2G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
191 |
1U3G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
192 |
1U4G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
193 |
1U5G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
194 |
1U6G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
195 |
2020-800 |
Delay 800 +/-16 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
196 |
20PM8AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 800V |
IPRS Baneasa |
197 |
20SI8 |
20A 800V Silicon Rectifier Diode |
IPRS Baneasa |
198 |
20SI8R |
20A 800V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
199 |
250JB8L |
V(rrm): 800V; 25A rectifier bridge |
International Rectifier |
200 |
25LC12 |
Silicon diffused junction rectifier 25A 800V |
TOSHIBA |
201 |
25LF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW |
TOSHIBA |
202 |
274.010 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/100. Nominal resistance cold 80.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
203 |
2KBP08 |
Diode Rectifier Bridge Single 800V 2A 4-Pin D-44 |
New Jersey Semiconductor |
204 |
2KBP08-1 |
Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
205 |
2KBP08M |
Diode Rectifier Bridge Single 800V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
206 |
2N1073A |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V |
Motorola |
207 |
2N1722A |
Trans GP BJT NPN 80V 5A 3-Pin TO-53 |
New Jersey Semiconductor |
208 |
2N1724 |
Trans GP BJT NPN 80V 5A 3-Pin TO-61 |
New Jersey Semiconductor |
209 |
2N174 |
Trans GP BJT NPN 80V 5A 3-Pin TO-61 |
New Jersey Semiconductor |
210 |
2N1768 |
Trans GP BJT NPN 80V 5A 3-Pin TO-61 |
New Jersey Semiconductor |
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