No. |
Part Name |
Description |
Manufacturer |
151 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
152 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
153 |
2N6034 |
MIDIUM POWER DAR;OMGTONS |
ST Microelectronics |
154 |
2N6034B |
Trans Darlington PNP 40V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
155 |
2N6035 |
Leaded Power Transistor Darlington |
Central Semiconductor |
156 |
2N6035 |
Trans Darlington PNP 60V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
157 |
2N6035 |
Plastic Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
158 |
2N6035 |
PNP medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
159 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
160 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
161 |
2N6035 |
MIDIUM POWER DAR;OMGTONS |
ST Microelectronics |
162 |
2N6035-D |
Plastic Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
163 |
2N6036 |
Leaded Power Transistor Darlington |
Central Semiconductor |
164 |
2N6036 |
Trans Darlington PNP 60V 4A 3-Pin TO-126 |
New Jersey Semiconductor |
165 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
166 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
167 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
168 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
169 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
ST Microelectronics |
170 |
2N6037 |
Leaded Power Transistor Darlington |
Central Semiconductor |
171 |
2N6037 |
Trans Darlington NPN 40V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
172 |
2N6037 |
NPN medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
173 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
174 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
175 |
2N6037 |
MIDIUM POWER DAR;OMGTONS |
ST Microelectronics |
176 |
2N6038 |
Leaded Power Transistor Darlington |
Central Semiconductor |
177 |
2N6038 |
Trans Darlington NPN 60V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
178 |
2N6038 |
Plastic Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
179 |
2N6038 |
NPN medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
180 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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