No. |
Part Name |
Description |
Manufacturer |
211 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
212 |
2N6050 |
12A Darlington complementary silicon power PNP Transistor 150W |
Motorola |
213 |
2N6050 |
Trans Darlington PNP 60V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
214 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
215 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
216 |
2N6050 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6057 |
Silicon Transistor Corporation |
217 |
2N6051 |
Leaded Power Transistor Darlington |
Central Semiconductor |
218 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
219 |
2N6051 |
PNP Darlington Transistor |
Microsemi |
220 |
2N6051 |
12A Darlington complementary silicon power PNP Transistor 150W |
Motorola |
221 |
2N6051 |
Trans Darlington PNP 80V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
222 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
223 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
224 |
2N6051 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6058 |
Silicon Transistor Corporation |
225 |
2N6052 |
Leaded Power Transistor Darlington |
Central Semiconductor |
226 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
227 |
2N6052 |
PNP Darlington Transistor |
Microsemi |
228 |
2N6052 |
12A Darlington complementary silicon power PNP Transistor 150W |
Motorola |
229 |
2N6052 |
Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
230 |
2N6052 |
Power 12A 100V Darlington PNP |
ON Semiconductor |
231 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
232 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
233 |
2N6052 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6059 |
Silicon Transistor Corporation |
234 |
2N6052G |
Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
235 |
2N6053 |
Leaded Power Transistor Darlington |
Central Semiconductor |
236 |
2N6053 |
60V complementary power darlington |
Comset Semiconductors |
237 |
2N6053 |
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR |
New Jersey Semiconductor |
238 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
239 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
240 |
2N6053 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6055 |
Silicon Transistor Corporation |
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