| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 152 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 153 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 154 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 155 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 156 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
| 157 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 158 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
| 159 |
1S2615 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 160 |
1S2616 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 161 |
1S2617 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 162 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 163 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 164 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 165 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 166 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 167 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 168 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 169 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 170 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 171 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 172 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 173 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 174 |
1S84 |
Silicon Diffused Rectifier |
Hitachi Semiconductor |
| 175 |
1S84H |
Silicon Diffused for High Voltage Switching |
Hitachi Semiconductor |
| 176 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 177 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 178 |
1Z100 |
Silicon diffused type zener diode. Typ zener voltage 100 V. |
Panasonic |
| 179 |
1Z110 |
Silicon diffused type zener diode. Typ zener voltage 110 V. |
Panasonic |
| 180 |
1Z150 |
Silicon diffused type zener diode. Typ zener voltage 150 V. |
Panasonic |
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