| No. |
Part Name |
Description |
Manufacturer |
| 31 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
| 32 |
10SI4R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 400V |
IPRS Baneasa |
| 33 |
10SI5 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V |
IPRS Baneasa |
| 34 |
10SI5R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V |
IPRS Baneasa |
| 35 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
| 36 |
10SI6R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V |
IPRS Baneasa |
| 37 |
10SI7 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V |
IPRS Baneasa |
| 38 |
10SI7R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 700V |
IPRS Baneasa |
| 39 |
10SI8 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V |
IPRS Baneasa |
| 40 |
10SI8R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 800V |
IPRS Baneasa |
| 41 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 42 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 43 |
12CC12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 44 |
12CD12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 45 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 46 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 47 |
12FC12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 48 |
12FD12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 49 |
12GC11 |
Silicon diffused junction rectifier 400V 12A |
TOSHIBA |
| 50 |
12JC11 |
Silicon diffused junction rectifier 600V 12A |
TOSHIBA |
| 51 |
12LC11 |
Silicon diffused junction rectifier 800V 12A |
TOSHIBA |
| 52 |
12NC11 |
Silicon diffused junction rectifier 1000V 12A |
TOSHIBA |
| 53 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 54 |
15CC11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 55 |
15CD11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 56 |
15FC11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| 57 |
15FD11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| 58 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 59 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 60 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| | | |
