| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 152 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 153 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 154 |
2N5060-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors |
ON Semiconductor |
| 155 |
2N5060RL1 |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 156 |
2N5060RLRAG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 157 |
2N5061G |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 158 |
2N5061RLR |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 159 |
2N5061RLRAG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 160 |
2N5061RLRM |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 161 |
2N5062G |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 162 |
2N5062RLRAG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 163 |
2N5064 |
Thyristor sensitive gate |
Philips |
| 164 |
2N5064RLRMG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 165 |
2N6071 |
Sensitive Gate Triacs |
ON Semiconductor |
| 166 |
2N6071-D |
Sensitive Gate Triacs Silicon Bidirectional Thyristors |
ON Semiconductor |
| 167 |
2N6071A |
Sensitive Gate Triacs |
ON Semiconductor |
| 168 |
2N6071B |
Sensitive Gate Triacs |
ON Semiconductor |
| 169 |
2N6071BT |
Sensitive Gate Triacs |
ON Semiconductor |
| 170 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 171 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 172 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 173 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 174 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 175 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 176 |
2N6073B |
Sensitive Gate Triacs |
ON Semiconductor |
| 177 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 178 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 179 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 180 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
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