| No. |
Part Name |
Description |
Manufacturer |
| 151 |
350PEQ60W |
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 152 |
350PEQ70W |
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 153 |
350PEQ80W |
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 154 |
350PEQ90W |
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 155 |
350PJT100 |
V(rrm/drm): 1000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 156 |
350PJT120 |
V(rrm/drm): 1200V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 157 |
350PJT140 |
V(rrm/drm): 1400V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 158 |
350PJT160 |
V(rrm/drm): 1600V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 159 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 160 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 161 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 162 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 163 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 164 |
3N201 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 165 |
3N202 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 166 |
3N203 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 167 |
3N211 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 168 |
3N212 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 169 |
3N213 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 170 |
3SK126 |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) |
TOSHIBA |
| 171 |
3SK127 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) |
TOSHIBA |
| 172 |
3SK134B |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 173 |
3SK151 |
N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER/ VHF RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 174 |
3SK153 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 175 |
3SK165 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 176 |
3SK165A |
GaAs N-channel Dual Gate MES FET |
SONY |
| 177 |
3SK165A-0 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 178 |
3SK165A-1 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 179 |
3SK166 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 180 |
3SK166A |
GaAs N-channel Dual Gate MES FET |
SONY |
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