| No. |
Part Name |
Description |
Manufacturer |
| 211 |
323B |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 212 |
323C |
Quad 2 Input Gate Collector OR able |
Amelco Semiconductor |
| 213 |
350PEQ100W |
V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 214 |
350PEQ110W |
V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 215 |
350PEQ120W |
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 216 |
350PEQ50W |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 217 |
350PEQ60W |
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 218 |
350PEQ70W |
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 219 |
350PEQ80W |
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 220 |
350PEQ90W |
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 221 |
350PJT100 |
V(rrm/drm): 1000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 222 |
350PJT120 |
V(rrm/drm): 1200V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 223 |
350PJT140 |
V(rrm/drm): 1400V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 224 |
350PJT160 |
V(rrm/drm): 1600V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 225 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 226 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 227 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 228 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 229 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 230 |
3N201 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 231 |
3N202 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 232 |
3N203 |
DUAL GATE MOSFET VHF AMPLIFIER |
Motorola |
| 233 |
3N209 |
N-Channel Dual Gate silicon-nitride passivated MOS Field-Effect Transistor |
Motorola |
| 234 |
3N210 |
N-Channel Dual Gate silicon-nitride passivated MOS Field-Effect Transistor |
Motorola |
| 235 |
3N211 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 236 |
3N212 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 237 |
3N213 |
Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
Motorola |
| 238 |
3SK101 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 239 |
3SK102 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 240 |
3SK114 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
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