| No. |
Part Name |
Description |
Manufacturer |
| 151 |
CLD185 |
Silicon Photodiode, 3 leaded TO-8 metal can |
Clairex Technologies |
| 152 |
CLD185R |
Silicon Photodiode, 3 leaded TO-8 metal can |
Clairex Technologies |
| 153 |
CLD370F |
Silicon Photodiode, 5mm (T-1 3/4) plastic |
Clairex Technologies |
| 154 |
DF1 |
Germanium photodiode |
IPRS Baneasa |
| 155 |
DF1 |
Ge PHOTODIODE |
IPRS Baneasa |
| 156 |
DF1 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 157 |
DF1 |
Germanium junction photodiode |
IPRS Baneasa |
| 158 |
DF2 |
Germanium photodiode |
IPRS Baneasa |
| 159 |
DF2 |
Ge PHOTODIODE |
IPRS Baneasa |
| 160 |
DF2 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 161 |
DF3 |
Germanium photodiode |
IPRS Baneasa |
| 162 |
DF3 |
Ge PHOTODIODE |
IPRS Baneasa |
| 163 |
DF3 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 164 |
FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode |
Fujitsu Microelectronics |
| 165 |
G1115 |
GaAsP photodiode |
Hamamatsu Corporation |
| 166 |
G1116 |
GaAsP photodiode |
Hamamatsu Corporation |
| 167 |
G1117 |
GaAsP photodiode |
Hamamatsu Corporation |
| 168 |
G1118 |
GaAsP photodiode |
Hamamatsu Corporation |
| 169 |
G1120 |
GaAsP photodiode |
Hamamatsu Corporation |
| 170 |
G1126-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 171 |
G1127-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 172 |
G1735 |
GaAsP photodiode |
Hamamatsu Corporation |
| 173 |
G1736 |
GaAsP photodiode |
Hamamatsu Corporation |
| 174 |
G1737 |
GaAsP photodiode |
Hamamatsu Corporation |
| 175 |
G1738 |
GaAsP photodiode |
Hamamatsu Corporation |
| 176 |
G1740 |
GaAsP photodiode |
Hamamatsu Corporation |
| 177 |
G1746 |
GaAsP photodiode |
Hamamatsu Corporation |
| 178 |
G1747 |
GaAsP photodiode |
Hamamatsu Corporation |
| 179 |
G1961 |
GaP photodiode |
Hamamatsu Corporation |
| 180 |
G1962 |
GaP photodiode |
Hamamatsu Corporation |
| | | |
