| No. |
Part Name |
Description |
Manufacturer |
| 211 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 212 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 213 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 214 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 215 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 216 |
G7151-16 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 217 |
G7189 |
GaAsP photodiode |
Hamamatsu Corporation |
| 218 |
G7871 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 219 |
G7871-02 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 220 |
G7881 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
Hamamatsu Corporation |
| 221 |
G7881-21 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 222 |
G7881-22 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 223 |
G7881-23 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 224 |
G7881-32 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 225 |
G7881-44 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 226 |
G8194 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 227 |
G8194-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 228 |
G8194-22 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 229 |
G8194-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 230 |
G8194-32 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 231 |
G8194-44 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 232 |
G8195 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 233 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 234 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 235 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 236 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 237 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 238 |
G8195-32 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 239 |
G8198 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 240 |
G8198-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
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