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Datasheets for SPEED

Datasheets found :: 23477
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 1SS377 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching TOSHIBA
152 1SS378 Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching TOSHIBA
153 1SS382 Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
154 1SS383 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
155 1SS384 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
156 1SS385 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching TOSHIBA
157 1SS385F Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching TOSHIBA
158 1SS387 Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
159 1SS388 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
160 1SS389 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
161 1SS391 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
162 1SS392 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
163 1SS393 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
164 1SS394 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
165 1SS395 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
166 1SS396 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
167 1SS397 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
168 1SS398 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
169 1SS399 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
170 1SS400T1 High Speed Switching Diode ON Semiconductor
171 1SS401 Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications TOSHIBA
172 1SS402 Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications TOSHIBA
173 1SS404 Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications TOSHIBA
174 1SS92 (1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes ROHM
175 28C256AJC-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
176 28C256AJC-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
177 28C256AJC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
178 28C256AJC-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
179 28C256AJC-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
180 28C256AJC-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC


Datasheets found :: 23477
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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