DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for SPEED

Datasheets found :: 23890
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 1SS378 Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching TOSHIBA
182 1SS382 Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
183 1SS383 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
184 1SS384 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
185 1SS385 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching TOSHIBA
186 1SS385F Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching TOSHIBA
187 1SS387 Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
188 1SS388 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
189 1SS389 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
190 1SS391 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
191 1SS392 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
192 1SS393 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
193 1SS394 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
194 1SS395 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
195 1SS396 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
196 1SS397 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
197 1SS398 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
198 1SS399 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
199 1SS400T1 High Speed Switching Diode ON Semiconductor
200 1SS401 Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications TOSHIBA
201 1SS402 Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications TOSHIBA
202 1SS404 Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications TOSHIBA
203 1SS92 (1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes ROHM
204 2530 High Speed 512 x 8 Static Read-only Memory Signetics
205 2530I High Speed 512 x 8 Static Read-only Memory Signetics
206 2530N High Speed 512 x 8 Static Read-only Memory Signetics
207 28C256AJC-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
208 28C256AJC-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
209 28C256AJC-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
210 28C256AJC-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC


Datasheets found :: 23890
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



© 2024 - www Datasheet Catalog com