| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N4014 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 152 |
2N4014 |
HIGH-VOLTAGE, HIGH CURRENT SWITCH |
SGS Thomson Microelectronics |
| 153 |
2N4014 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 154 |
2N4034 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 155 |
2N404 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 156 |
2N4046 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 157 |
2N4047 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 158 |
2N404A |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 159 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 160 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 161 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 162 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 163 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 164 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 165 |
2N4347 |
Silicon HOMETAXIAL NPN transistor, high voltage amplifier |
SGS-ATES |
| 166 |
2N4348 |
HIGH VOLTAGE, HIGH CURRENT POWER TRANSISTORS |
General Electric Solid State |
| 167 |
2N4348 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier |
SGS-ATES |
| 168 |
2N4348 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier |
SGS-ATES |
| 169 |
2N4416 |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
| 170 |
2N4416A |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
| 171 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 172 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 173 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 174 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 175 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 176 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 177 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 178 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 179 |
2N5157 |
3.5A power, high voltage, NPN silicon transistor 100W |
Motorola |
| 180 |
2N525 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| | | |
