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Datasheets found :: 26553
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No. Part Name Description Manufacturer
181 2N526 Low power, high frequency germanium transistor PNP IPRS Baneasa
182 2N527 Low power, high frequency germanium transistor PNP IPRS Baneasa
183 2N5301 High current, high power, high speed N-P-N power transistor. 40V, 200W. General Electric Solid State
184 2N5301 High current, high power, high speed N-P-N power transistor. 40V, 200W. General Electric Solid State
185 2N5302 High current, high power, high speed N-P-N power transistor. 60V, 200W. General Electric Solid State
186 2N5302 High current, high power, high speed N-P-N power transistor. 60V, 200W. General Electric Solid State
187 2N5303 High current, high power, high speed N-P-N power transistor. 80V, 200W. General Electric Solid State
188 2N5303 High current, high power, high speed N-P-N power transistor. 80V, 200W. General Electric Solid State
189 2N5630 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
190 2N5631 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
191 2N5632 10A complementary silicon high-voltage, high-power NPN transistor 150W Motorola
192 2N5633 10A complementary silicon high-voltage, high-power NPN transistor 150W Motorola
193 2N5634 10A complementary silicon high-voltage, high-power NPN transistor 150W Motorola
194 2N5671 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
195 2N5671 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
196 2N5672 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
197 2N5672 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
198 2N5838 High-voltage, high-power silicon N-P-N power transistor. General Electric Solid State
199 2N5838 HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS Motorola
200 2N5839 High-voltage, high-power silicon N-P-N power transistor. General Electric Solid State
201 2N5839 HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS Motorola
202 2N5840 High-voltage, high-power silicon N-P-N power transistor. General Electric Solid State
203 2N5840 HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS Motorola
204 2N5885 High-current, high-power, high-speed power transistor. 60V, 200W. General Electric Solid State
205 2N5885 High-current, high-power, high-speed power transistor. 60V, 200W. General Electric Solid State
206 2N5886 High-current, high-power, high-speed power transistor. 80V, 200W. General Electric Solid State
207 2N5886 High-current, high-power, high-speed power transistor. 80V, 200W. General Electric Solid State
208 2N5911 Wideband, High Gain, Monolithic Dual, N- Channel JFET Linear Systems
209 2N5912 Wideband, High Gain, Monolithic Dual, N- Channel JFET Linear Systems
210 2N5912C Wideband, High Gain, Monolithic Dual, N- Channel JFET Linear Systems


Datasheets found :: 26553
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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