| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N1143 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 152 |
2N1195 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 153 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 154 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 155 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 156 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 157 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 158 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 159 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 160 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 161 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 162 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 163 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 164 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 165 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 166 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 167 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 168 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 169 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 170 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 171 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 172 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 173 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 174 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 175 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 176 |
2N3866 |
Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages |
AEG-TELEFUNKEN |
| 177 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 178 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 179 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 180 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
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