| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 182 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 183 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 184 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 185 |
2SB1117 |
Suitable for driver of solenoid or motor, or electronic flash |
NEC |
| 186 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
| 187 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 188 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 189 |
2SC2995 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications |
TOSHIBA |
| 190 |
2SC3501 |
VHF AMPLIFIER VHF TV TUNER MIXER, OSCILLATOR |
Hitachi Semiconductor |
| 191 |
2SC4179 |
FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 192 |
2SC466 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF TV Mixer, Oscillator |
Hitachi Semiconductor |
| 193 |
2SC466H |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF Tuner RF Amp., Mixer, Oscillator |
Hitachi Semiconductor |
| 194 |
2SC4871 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 195 |
2SC5245 |
NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 196 |
2SC5275 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 197 |
2SC5276 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 198 |
2SC5277 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 199 |
2SC5534 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 200 |
2SC5536 |
NPN Epitaxial Planar Silicon Transistor VHF Low-Noise Amplifier , OSC Applications |
SANYO |
| 201 |
2SC717 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF RF Amplifier, Mixer, Oscillator |
Hitachi Semiconductor |
| 202 |
2SC717 |
VHF RF AMPLIFIER, MIXER, OSCILLATOR |
Unknow |
| 203 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 204 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 205 |
3032 |
90 CROSSOVER HYBRID COUPLER 800-900,890-960, OR 1700-1900 MHZ |
Tyco Electronics |
| 206 |
3B34 |
Isolated 2, 3, or 4-Wire RTD Input Signal Conditioning Module |
Analog Devices |
| 207 |
3B34-00 |
Isolated 2, 3, or 4-Wire RTD Input Signal Conditioning Module |
Analog Devices |
| 208 |
3B34-01 |
Isolated 2, 3, or 4-Wire RTD Input Signal Conditioning Module |
Analog Devices |
| 209 |
3B34-02 |
Isolated 2, 3, or 4-Wire RTD Input Signal Conditioning Module |
Analog Devices |
| 210 |
3B34-03 |
Isolated 2, 3, or 4-Wire RTD Input Signal Conditioning Module |
Analog Devices |
| | | |
