No. |
Part Name |
Description |
Manufacturer |
151 |
BCX59VIII |
NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
152 |
BCX59X |
NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
153 |
BCX78 |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
154 |
BCX78-IX |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
155 |
BCX78-VII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
156 |
BCX78-VIII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
157 |
BCX78-X |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
158 |
BCX79 |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
159 |
BCX79-IX |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
160 |
BCX79-VII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
161 |
BCX79-VIII |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
162 |
BCX79-X |
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
Siemens |
163 |
BF120 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage (in german) |
ITT Semiconductors |
164 |
BF421 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
165 |
BF423 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
166 |
BF622 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
167 |
BF623 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
168 |
BFP22 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
169 |
BFP23 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
170 |
BFP25 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
171 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
172 |
BFR64 |
NPN silicon multi-emitter transistor in a capstan envelope |
Philips |
173 |
BFR65 |
NPN multi-emitter silicon transistor in a capstan envelope |
Philips |
174 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
175 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
176 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
177 |
BFW16A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
178 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
179 |
BFW17A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
180 |
BFW30 |
NPN multi-emitter high-frequency transistor |
Philips |
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