| No. |
Part Name |
Description |
Manufacturer |
| 271 |
MJ10008 |
20A NPN silicon power darlington transistor with base-emitter speedup diode 175W 450V SWITCHMODE SERIES |
Motorola |
| 272 |
MJ10009 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
Boca Semiconductor Corporation |
| 273 |
MJ10009-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
ON Semiconductor |
| 274 |
MJ10015-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
ON Semiconductor |
| 275 |
MJ10020-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
ON Semiconductor |
| 276 |
MJ10023-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
ON Semiconductor |
| 277 |
MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 278 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 279 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 280 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
| 281 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 282 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 283 |
MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 284 |
MLED60 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 285 |
MLED90 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 286 |
MLED92 |
Low Cost Infrared-Emitting Diode PN Gallium Arsenide |
Motorola |
| 287 |
NTE101 |
Germanium complementary transistor NPN oscillator, mixer for AM radio, medium speed switch. Collector-base voltage 25 V. Collector-emitter voltage 25V. Emitter-base voltage 25V. Collector current 300mA. |
NTE Electronics |
| 288 |
NTE3029 |
Infrared-Emitting Diode |
NTE Electronics |
| 289 |
NTE3029A |
Infrared-Emitting Diode |
NTE Electronics |
| 290 |
NTE3029B |
Infrared-Emitting Diode |
NTE Electronics |
| 291 |
NTE99 |
Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode |
NTE Electronics |
| 292 |
OE3202G-004 |
1.3 ��m Edge-Emitting LED DIP Module |
OKI electronic components |
| 293 |
OE3202G-004 |
1.3 m Edge-Emitting LED DIP Module |
OKI electronic eomponets |
| 294 |
OE3202G-010 |
1.3 ��m Edge-Emitting LED DIP Module |
OKI electronic components |
| 295 |
OE3202G-010 |
1.3 m Edge-Emitting LED DIP Module |
OKI electronic eomponets |
| 296 |
OE3496G |
1.3 ��m Edge-Emitting LED Coaxial Module |
OKI electronic components |
| 297 |
OE3496G |
1.3 m Edge-Emitting LED Coaxial Module |
OKI electronic eomponets |
| 298 |
OE5202G |
1.55 ��m Edge-Emitting LED DIP Module |
OKI electronic components |
| 299 |
OE5202G |
1.55 m Edge-Emitting LED DIP Module |
OKI electronic eomponets |
| 300 |
PC356NT |
Type Photocoupler Mini-Flat Package, High Collector-emitter Voltage |
SHARP |
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