DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 00 M

Datasheets found :: 12910
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 1N298A 30 V, 500 mA, gold bonded germanium diode BKC International Electronics
152 1N3064 50 V, 500 mW ultra fast low capacitance diode BKC International Electronics
153 1N311 Microwave Mixer - to 12,000 MHz NF=10.5 dB Motorola
154 1N3125 40 V, 500 mA, gold bonded germanium diode BKC International Electronics
155 1N314 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
156 1N3146 25 V, 500 mA, gold bonded germanium diode BKC International Electronics
157 1N3287 6 V, 200 mA, gold bonded germanium diode BKC International Electronics
158 1N3287WUSN 6 V, 500 mA, gold bonded germanium diode BKC International Electronics
159 1N3465 60 V, 500 mA, gold bonded germanium diode BKC International Electronics
160 1N3466 40 V, 500 mA, gold bonded germanium diode BKC International Electronics
161 1N3467 15 V, 500 mA, gold bonded germanium diode BKC International Electronics
162 1N3468 15 V, 500 mA, gold bonded germanium diode BKC International Electronics
163 1N3470 35 V, 500 mA, gold bonded germanium diode BKC International Electronics
164 1N3481 Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz Motorola
165 1N3482 Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz Motorola
166 1N3483 8 V, 500 mA, gold bonded germanium diode BKC International Electronics
167 1N355 100 V, 500 mA, gold bonded germanium diode BKC International Electronics
168 1N3592 25 V, 500 mA, gold bonded germanium diode BKC International Electronics
169 1N3595 125 V, 500 mW silicon switching diode BKC International Electronics
170 1N3595-1 125 V, 500 mW silicon switching diode BKC International Electronics
171 1N3666M1 80 V, 500 mA, gold bonded germanium diode BKC International Electronics
172 1N3666M2 80 V, 500 mA, gold bonded germanium diode BKC International Electronics
173 1N367 15 V, 500 mA, gold bonded germanium diode BKC International Electronics
174 1N3769 90 V, 500 mA, gold bonded germanium diode BKC International Electronics
175 1N3773 25 V, 500 mA, gold bonded germanium diode BKC International Electronics
176 1N4009 25 V, 500 mW ultra high speed diode BKC International Electronics
177 1N4148 75 V, 500 mW high conductance ultra fast switching diode BKC International Electronics
178 1N4148-1 100 V, 500 mW silicon switching diode BKC International Electronics
179 1N4149 75 V, 500 mW high conductance ultra fast switching diode BKC International Electronics
180 1N4150 500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 200mA If Continental Device India Limited


Datasheets found :: 12910
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



© 2024 - www Datasheet Catalog com