No. |
Part Name |
Description |
Manufacturer |
181 |
1N4150-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
182 |
1N4151 |
50 V, 500 mW high speed diode |
BKC International Electronics |
183 |
1N4151 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 50mA If |
Continental Device India Limited |
184 |
1N4152 |
30 V, 500 mW high speed diode |
BKC International Electronics |
185 |
1N4153 |
50 V, 500 mW high speed diode |
BKC International Electronics |
186 |
1N4153-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
187 |
1N4154 |
25 V, 500 mW high speed diode |
BKC International Electronics |
188 |
1N4154-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
189 |
1N417 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
190 |
1N418 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
191 |
1N419 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
192 |
1N4305 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
193 |
1N4370 |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.4V |
Transitron Electronic |
194 |
1N4370A |
500 mW DO-35 Glass Zener Voltage Regulator Diodes |
Motorola |
195 |
1N4370A |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.4V, tolerance ±5% |
Transitron Electronic |
196 |
1N4370A-D |
500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators |
ON Semiconductor |
197 |
1N4371 |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.7V |
Transitron Electronic |
198 |
1N4371A |
500 milliwatts glass silicon zener diode |
Motorola |
199 |
1N4371A |
Silicon Zener Diode 400 Milliwatt Low Voltage 2.7V, tolerance ±5% |
Transitron Electronic |
200 |
1N4372 |
Silicon Zener Diode 400 Milliwatt Low Voltage 3.0V |
Transitron Electronic |
201 |
1N4372A |
500 milliwatts glass silicon zener diode |
Motorola |
202 |
1N4372A |
Silicon Zener Diode 400 Milliwatt Low Voltage 3.0V, tolerance ±5% |
Transitron Electronic |
203 |
1N4446 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
204 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
205 |
1N4448 |
100 V, 500 mW silicon planar diode |
BKC International Electronics |
206 |
1N4449 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
207 |
1N4454 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
208 |
1N447 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
209 |
1N448 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
210 |
1N449 |
50 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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