| No. |
Part Name |
Description |
Manufacturer |
| 151 |
APT5560AN |
V(dss): 550V; 11.5A; 0.6 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 152 |
APT6045CVR |
POWER MOS V 600V 11.8A 0.450 Ohm |
Advanced Power Technology |
| 153 |
APT6060AN |
V(dss): 600V; 11.5A; 0.6 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 154 |
APT8065AVR |
POWER MOS V 800V 11.5A 0.650 Ohm |
Advanced Power Technology |
| 155 |
APT8067HVR |
POWER MOS V 800V 11.5A 0.670 Ohm |
Advanced Power Technology |
| 156 |
ASP1212 |
Single Loop, 8 phase VR11.x Intel Digital PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
| 157 |
ASP1212-N20NT |
Single Loop, 8 phase VR11.x Intel Digital PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
| 158 |
ATV15CJ130A-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=11.1V, Tolerance=10% |
Comchip Technology |
| 159 |
ATV15CJ130CA-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=11.1V, Tolerance=5% |
Comchip Technology |
| 160 |
BB0502X7R104M16VNT9820 |
9.9-11.2Gb/s Optical Modulator Driver |
TriQuint Semiconductor |
| 161 |
BSO119N03S |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SO8, RDSon = 11.9mOhm, 11A, LL |
Infineon |
| 162 |
BSO130P03S |
OptiMOS MOSFET, -30V, SO-8, Ron =13mW, 11.3A, LL |
Infineon |
| 163 |
BUK7M11-40H |
N-channel 40 V, 11.0 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 164 |
BUK9K12-60E |
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET |
Nexperia |
| 165 |
BUK9K12-60E |
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET |
NXP Semiconductors |
| 166 |
BUK9M11-40H |
N-channel 40 V, 11.0 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 167 |
BUZ351 |
11.5A, 400V, 0.400 ohm, N-Channel Power MOSFET FN2266.1 |
Intersil |
| 168 |
BUZ64 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 11.5A |
Siliconix |
| 169 |
BZY78 |
Voltage Reference Diode 5.3V, high voltage stability 1% at a zener current of 11.5mA |
Philips |
| 170 |
C21 |
EG11.. Case Outlines |
IPRS Baneasa |
| 171 |
C395-MB290-E400 |
11.0mW; color:UV; 3.7-4.0V; mega bright InGaN LED |
CREE POWER |
| 172 |
C460-MB290-E1000 |
11.0mW; color:deep blue; 3.7-4.0V; mega bright InGaN LED |
CREE POWER |
| 173 |
C505-XB290-E1000-A |
11.0mW; color:green; 3.8-4.0V; Xbright InGaN LED |
CREE POWER |
| 174 |
C505-XB290-E1000-B |
11.0mW; color:green; 3.8-4.0V; Xbright InGaN LED |
CREE POWER |
| 175 |
CDLL942S |
11.22-12.28 temperature compensated zener reference diode |
Compensated Devices Incorporated |
| 176 |
CFY30 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 177 |
CHL8314 |
4 phase VR11.1 multiphase PWM controller for high efficiency solutions |
International Rectifier |
| 178 |
CHL8314CRT |
4 phase VR11.1 multiphase PWM controller for high efficiency solutions |
International Rectifier |
| 179 |
CHL8316 |
6 phase VR11.1 multiphase PWM controller for high efficiency solutions |
International Rectifier |
| 180 |
CHL8316CRT |
6 phase VR11.1 multiphase PWM controller for high efficiency solutions |
International Rectifier |
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