| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N415F |
Microwave X-band Mixer; NF=11.4 to 6.5 dB |
Motorola |
| 32 |
1N415G |
Microwave X-band Mixer; NF=11.4 to 6.5 dB |
Motorola |
| 33 |
1N4741 |
11.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 34 |
1N4741 |
1 W silicon zener diode. Nominal zener voltage 11.0 V. |
Fairchild Semiconductor |
| 35 |
1N4741A |
11.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 36 |
1N5141A |
Diode VAR Cap Single 60V 11.4pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 37 |
1N5241 |
500 mW silicon zener diode. Nominal zener voltage 11.0 V. |
Fairchild Semiconductor |
| 38 |
1N5241B |
11.0V 500 mW Zener Diode |
Continental Device India Limited |
| 39 |
1N5531A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 40 |
1N5531B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 41 |
1N5636A |
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 42 |
1N5737B |
11.0V Voltage Reference Diode |
Philips |
| 43 |
1N5937 |
1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 44 |
1N5937A |
1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 45 |
1N5937C |
1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 46 |
1N5937D |
1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 47 |
1N6110 |
Diode TVS Single Bi-Dir 11.4V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 48 |
1N6110A |
Diode TVS Single Bi-Dir 11.4V 500W 2-Pin |
New Jersey Semiconductor |
| 49 |
1N6146 |
Diode TVS Single Bi-Dir 11.4V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 50 |
1N6146A |
Diode TVS Single Bi-Dir 11.4V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 51 |
1N6274A |
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 52 |
1N6375 |
Zener 11.7V 1500W |
ON Semiconductor |
| 53 |
1N752 |
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 54 |
1N941 |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 55 |
1N941 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.088V |
Motorola |
| 56 |
1N941 |
Diode Zener Single 11.7V 5% 500mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 57 |
1N941 |
Silicon Voltage Reference Diode 11.7V |
Transitron Electronic |
| 58 |
1N941A |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 59 |
1N941A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.181V |
Motorola |
| 60 |
1N941A |
Diode Zener Single 11.7V 5% 500mW 2-Pin DO-7 |
New Jersey Semiconductor |
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