| No. |
Part Name |
Description |
Manufacturer |
| 151 |
R3112N131C |
LOW VOLTAGE DETECTOR WITH OUTPUT DELAY |
Ricoh |
| 152 |
R3112N131C-TR |
LOW VOLTAGE DETECTOR WITH OUTPUT DELAY |
Ricoh |
| 153 |
RFM12N10 |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 154 |
RFM12N10 |
Trans MOSFET N-CH 100V 12A |
New Jersey Semiconductor |
| 155 |
RFM12N10L |
Trans MOSFET N-CH 100V 12A |
New Jersey Semiconductor |
| 156 |
RFM12N18 |
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 157 |
RFM12N18 |
Trans MOSFET N-CH 100V 12A |
New Jersey Semiconductor |
| 158 |
RFP12N10 |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 159 |
RFP12N10 |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 160 |
RFP12N10L |
12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 161 |
RFP12N10L |
12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET |
Intersil |
| 162 |
RFP12N10L |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 163 |
RFP12N18 |
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 164 |
RFP12N18 |
Trans MOSFET N-CH 180V 12A 3-Pin TO-220AB |
New Jersey Semiconductor |
| 165 |
STD12N10L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 166 |
STD12N10L |
N - CHANNEL 100V - 0.12 Ohms - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 167 |
STD12N10L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 168 |
STFW12N120K5 |
N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-3PF packge |
ST Microelectronics |
| 169 |
STH12N120K5-2 |
N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 170 |
STP12N120K5 |
N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package |
ST Microelectronics |
| 171 |
STW12N120K5 |
N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package |
ST Microelectronics |
| 172 |
T12N100 |
THYRISTOR 100V |
AEG-TELEFUNKEN |
| 173 |
T12N1000 |
THYRISTOR 1000V |
AEG-TELEFUNKEN |
| 174 |
TK32A12N1 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 175 |
TK32E12N1 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 176 |
TK42A12N1 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 177 |
TK42E12N1 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 178 |
TK56A12N1 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 179 |
TK56E12N1 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| 180 |
TK72A12N1 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| | | |
