No. |
Part Name |
Description |
Manufacturer |
91 |
MGV12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
92 |
MGW12N120 |
Insulated Gate Bipolar Transistor |
Motorola |
93 |
MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
94 |
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
95 |
MGW12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
96 |
MGW12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
97 |
MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
98 |
MN63Y3212N1 |
NFC Tag module |
Panasonic |
99 |
MTM12N10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
100 |
MTM12N10 |
P-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
New Jersey Semiconductor |
101 |
MTM12N10E |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
102 |
MTP12N10 |
N-CHANNEL TMOS POWER FET 12A 100V |
Motorola |
103 |
MTP12N10E |
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM |
Motorola |
104 |
MTP12N10E |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
105 |
MTP12N10E |
OBSOLETE - 12 Amp TO-220AB, N-Channel, VDSS 100 |
ON Semiconductor |
106 |
MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
107 |
MTP12N10L |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
108 |
MTP12N18 |
N-Channel Power MOSFETs, 12A, 150-200 V |
Fairchild Semiconductor |
109 |
MTP12N18 |
Trans MOSFET N-CH 180V 12A |
New Jersey Semiconductor |
110 |
NM27C512N120 |
524,288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
111 |
NM27C512N120 |
524,288-bit (64K x 8) high performance CMOS EPROM, 120ns |
National Semiconductor |
112 |
NM27C512N150 |
524,288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
113 |
NM27C512N150 |
524,288-bit (64K x 8) high performance CMOS EPROM, 150ns |
National Semiconductor |
114 |
NTD12N10 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
115 |
NTD12N10-001 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
116 |
NTD12N10-D |
Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement-Mode DPAK |
ON Semiconductor |
117 |
NTD12N10T4 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
118 |
NTD12N10T4G |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
119 |
PHD12N10E |
PowerMOS transistor |
Philips |
120 |
PHP12N10E |
PowerMOS transistor |
Philips |
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