| No. |
Part Name |
Description |
Manufacturer |
| 151 |
BDY25 |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 152 |
BDY25A |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 153 |
BDY25B |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 154 |
BDY25C |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 155 |
BDY25SB |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 156 |
BLF8G20LS-140V |
Power LDMOS transistor |
NXP Semiconductors |
| 157 |
BLF8G27LS-140V |
Power LDMOS transistor |
NXP Semiconductors |
| 158 |
BR252 |
Single-phase silicon bridge rectifier. VRRM = 200V, VRMS = 140V, VDC = 200V. Current 25A. |
Rectron Semiconductor |
| 159 |
BZV40C140 |
Silicon Power-Z-Diode 5W in plastic case 140V |
Siemens |
| 160 |
CMBT5550 |
0.250W General Purpose NPN SMD Transistor. 140V Vceo, 0.600A Ic, 60 hFE. Complementary CMBT5400 |
Continental Device India Limited |
| 161 |
CN455 |
0.900W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 1.000A Ic, 100 - 300 hFE |
Continental Device India Limited |
| 162 |
CSB817OF |
90.000W Power PNP Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 163 |
CSC1009 |
0.800W Low Frequency NPN Plastic Leaded Transistor. 140V Vceo, 0.700A Ic, 40 - 400 hFE. |
Continental Device India Limited |
| 164 |
CSC1009G |
0.800W Low Frequency NPN Plastic Leaded Transistor. 140V Vceo, 0.700A Ic, 200 - 400 hFE. |
Continental Device India Limited |
| 165 |
CSC1009O |
0.800W Low Frequency NPN Plastic Leaded Transistor. 140V Vceo, 0.700A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 166 |
CSC1009R |
0.800W Low Frequency NPN Plastic Leaded Transistor. 140V Vceo, 0.700A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 167 |
CSC1009Y |
0.800W Low Frequency NPN Plastic Leaded Transistor. 140V Vceo, 0.700A Ic, 120 - 240 hFE. |
Continental Device India Limited |
| 168 |
CSD1047OF |
90.000W Power NPN Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 169 |
CZRB3140-G |
Zener Diodes, PD=3Watts, VZ=140V |
Comchip Technology |
| 170 |
CZRC5382B-G |
Zener Diodes, PD=5Watts, VZ=140V |
Comchip Technology |
| 171 |
DB103 |
Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS bridge input voltage 140V. Maximum DC blocking voltage 200V. |
Wing Shing Computer Components |
| 172 |
DL5275 |
Pd=500mW, Vz=140V zener diode |
MCC |
| 173 |
DSS4140V |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 174 |
DSS4140V-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 175 |
DSS5140V |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 176 |
DSS5140V-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 177 |
DXT2014P5 |
140V PNP MEDIUM POWER TRANSISTOR PowerDI�5 |
Diodes |
| 178 |
DXT2014P5-13 |
140V PNP MEDIUM POWER TRANSISTOR PowerDI�5 |
Diodes |
| 179 |
ERJ6DSDR140V |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 180 |
FFM103 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 200V, maxVRMS = 140V, maxVDC = 200V. Current 1.0A. |
Rectron Semiconductor |
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