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Datasheets for 140V

Datasheets found :: 327
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 2N343 Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
62 2N3441 POWER TRANSISTORS(3A,140V,25W) MOSPEC Semiconductor
63 2N3441 NPN silicon power transistor 140V 25W 3A Motorola
64 2N3441 Trans GP BJT NPN 140V 3A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
65 2N3442 Power 10A 140V Discrete NPN ON Semiconductor
66 2N3634 Trans GP BJT PNP 140V 1A 3-Pin TO-39 New Jersey Semiconductor
67 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
68 2N3635 Trans GP BJT PNP 140V 1A 3-Pin TO-39 New Jersey Semiconductor
69 2N3637 140V/175 , 1A PNP Small Signal Transistor - TO-39 & TO-5 ON Semiconductor
70 2N3773 150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. Continental Device India Limited
71 2N3773 POWER TRANSISTORS(16A,140V,150W) MOSPEC Semiconductor
72 2N3773 16A complementary power transistor 140V 150W Motorola
73 2N3773 Trans GP BJT NPN 140V 16A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
74 2N3773 Power 16A 140V Discrete NPN ON Semiconductor
75 2N3773 High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. USHA India LTD
76 2N3773AR NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. USHA India LTD
77 2N4271 Trans GP BJT NPN 140V 2.5A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
78 2N4272 Trans GP BJT NPN 140V 2.5A 3-Pin TO-39 New Jersey Semiconductor
79 2N4277 Trans GP BJT NPN 140V 2.5A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
80 2N4347 High voltage silicon N-P-N transistor. 140V, 100W. General Electric Solid State
81 2N5550 0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE Continental Device India Limited
82 2N5550 Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 Box New Jersey Semiconductor
83 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
84 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
85 2N5631 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
86 2N5631 Trans GP BJT NPN 140V 16A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
87 2N5631 NPN transistor, 140V, 16A SemeLAB
88 2N5634 Trans GP BJT NPN 140V 15A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
89 2N5831 Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 New Jersey Semiconductor
90 2N5832 Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 New Jersey Semiconductor


Datasheets found :: 327
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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