No. |
Part Name |
Description |
Manufacturer |
61 |
2N343 |
Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
62 |
2N3441 |
POWER TRANSISTORS(3A,140V,25W) |
MOSPEC Semiconductor |
63 |
2N3441 |
NPN silicon power transistor 140V 25W 3A |
Motorola |
64 |
2N3441 |
Trans GP BJT NPN 140V 3A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
65 |
2N3442 |
Power 10A 140V Discrete NPN |
ON Semiconductor |
66 |
2N3634 |
Trans GP BJT PNP 140V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
67 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
68 |
2N3635 |
Trans GP BJT PNP 140V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
69 |
2N3637 |
140V/175 , 1A PNP Small Signal Transistor - TO-39 & TO-5 |
ON Semiconductor |
70 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
71 |
2N3773 |
POWER TRANSISTORS(16A,140V,150W) |
MOSPEC Semiconductor |
72 |
2N3773 |
16A complementary power transistor 140V 150W |
Motorola |
73 |
2N3773 |
Trans GP BJT NPN 140V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
74 |
2N3773 |
Power 16A 140V Discrete NPN |
ON Semiconductor |
75 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
76 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
77 |
2N4271 |
Trans GP BJT NPN 140V 2.5A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
78 |
2N4272 |
Trans GP BJT NPN 140V 2.5A 3-Pin TO-39 |
New Jersey Semiconductor |
79 |
2N4277 |
Trans GP BJT NPN 140V 2.5A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
80 |
2N4347 |
High voltage silicon N-P-N transistor. 140V, 100W. |
General Electric Solid State |
81 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
82 |
2N5550 |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
83 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
84 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
85 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
86 |
2N5631 |
Trans GP BJT NPN 140V 16A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
87 |
2N5631 |
NPN transistor, 140V, 16A |
SemeLAB |
88 |
2N5634 |
Trans GP BJT NPN 140V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
89 |
2N5831 |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 |
New Jersey Semiconductor |
90 |
2N5832 |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 |
New Jersey Semiconductor |
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