| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N990B |
Zener Diode 160V |
Motorola |
| 152 |
1S3160 |
1W Zener diode 160V |
Texas Instruments |
| 153 |
1S3160A |
1W Zener diode 160V, ±5% tolerance |
Texas Instruments |
| 154 |
1S6160 |
Silicon power zener diode 160V |
Texas Instruments |
| 155 |
1S6160A |
Silicon power zener diode 160V, ±5% tolerance |
Texas Instruments |
| 156 |
1S6160R |
Silicon power zener diode 160V, reverse polarity |
Texas Instruments |
| 157 |
1SMB160 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 160V. 600W peak power, 3.0W steady state. |
Motorola |
| 158 |
1SMB160A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 160V. 600W peak power, 3.0W steady state. |
Motorola |
| 159 |
1SMC160 |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 160V. 1500W peak power, 5.0W steady state. |
Motorola |
| 160 |
1SMC160A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 160V. 1500W peak power, 5.0W steady state. |
Motorola |
| 161 |
2N3441 |
Medium power silicon N-P-N transistor. 160V, 25W. |
General Electric Solid State |
| 162 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
| 163 |
2N3773 |
High voltage, high power transistor. 160V, 150W. |
General Electric Solid State |
| 164 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 165 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 166 |
2N550 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 167 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 168 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 169 |
2N5551 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 170 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 171 |
2N5954 |
1.5 Watt hermetically sealed glass silicon zener diode 160V |
Motorola |
| 172 |
2N6066 |
Germanium 10A power transistor 56W 160V |
Motorola |
| 173 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
| 174 |
2N6686 |
Trans GP BJT NPN 160V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 175 |
2SA1011 |
POWER TRANSISTORS(1.5A,160V,25W) |
MOSPEC Semiconductor |
| 176 |
2SA1011 |
Trans GP BJT PNP 160V 1.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 177 |
2SA1076 |
160V PNP silicon general purpose high speed power transistor |
Fujitsu Microelectronics |
| 178 |
2SA1205 |
Trans GP BJT PNP 160V 0.07A 3-Pin NP |
New Jersey Semiconductor |
| 179 |
2SA1209 |
160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 180 |
2SA1214 |
Trans GP BJT PNP 160V 15A 3-Pin MT-200 |
New Jersey Semiconductor |
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