| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SA1215 |
POWER TRANSISTORS(15A,160V,150W) |
MOSPEC Semiconductor |
| 182 |
2SA1217 |
Trans GP BJT PNP 160V 15A 3-Pin MT-200 |
New Jersey Semiconductor |
| 183 |
2SA1248 |
160V/700mA Switching Applications |
SANYO |
| 184 |
2SA1249 |
Trans GP BJT PNP 160V 1.5A 3-Pin TO-126 |
New Jersey Semiconductor |
| 185 |
2SA1249 |
160V/1.5A Switching Applications |
SANYO |
| 186 |
2SA1444 |
Trans GP BJT PNP 160V 1.5A 4-Pin(3+Tab) PCP |
New Jersey Semiconductor |
| 187 |
2SA1477 |
PNP Epitaxial Planar Silicon Transistors 160V/140mA Switching Applications |
SANYO |
| 188 |
2SA1507 |
PNP Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications |
SANYO |
| 189 |
2SA1769 |
160V/700mA Switching Applications |
SANYO |
| 190 |
2SA1942 |
Trans GP BJT PNP 160V 12A 3-Pin(3+Tab) TO-3PL |
New Jersey Semiconductor |
| 191 |
2SA1964 |
Trans GP BJT PNP 160V 1.5A 3-Pin(3+Tab) TO-220FP |
New Jersey Semiconductor |
| 192 |
2SA1964 |
For audio amplifier output stages/TV velocity modulation (-160V/ -1.5A) |
ROHM |
| 193 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 194 |
2SC2911 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 195 |
2SC2921 |
POWER TRANSISTORS(15A,160V,150W) |
MOSPEC Semiconductor |
| 196 |
2SC3116 |
NPN Epitaxial Planar Silicon Transistors 160V/700mA Switching Applications |
SANYO |
| 197 |
2SC3117 |
NPN Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications |
SANYO |
| 198 |
2SC313 |
Trans GP BJT NPN 160V 0.7A 3-Pin TO-126 |
New Jersey Semiconductor |
| 199 |
2SC3787 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA Switching Applications |
SANYO |
| 200 |
2SC4613 |
160V/700mA Switching Applications |
SANYO |
| 201 |
3.0SMCJ160 |
3000W voltage supressor, 160V |
MEI |
| 202 |
3.0SMCJ160A |
3000W voltage supressor, 160V |
MEI |
| 203 |
30KP160 |
Diode TVS Single Uni-Dir 160V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 204 |
30KP160A |
Diode TVS Single Uni-Dir 160V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 205 |
30KP160C |
Diode TVS Single Bi-Dir 160V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 206 |
30KP160CA |
Diode TVS Single Bi-Dir 160V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 207 |
30KPA160 |
Diode TVS Single Uni-Dir 160V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 208 |
30KPA160A |
Diode TVS Single Uni-Dir 160V 30KW 2-Pin |
New Jersey Semiconductor |
| 209 |
30KPA160C |
Diode TVS Single Bi-Dir 160V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 210 |
30KPA160CA |
Diode TVS Single Bi-Dir 160V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
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