| No. |
Part Name |
Description |
Manufacturer |
| 151 |
EA300 |
Green & yellow, right angle bi-color LED. Lens white diffused. Max.luminous intensity at 20mA: 40.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.1V(yellow). |
Gilway Technical Lamp |
| 152 |
EA444GY |
Green & yellow, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.2V(yellow). |
Gilway Technical Lamp |
| 153 |
F-51167NCU-FW-AA |
320 x 240dots; dot size:0.10 x 0.34mm; 0.3-7.0V 20.0mA LCD module |
Optrex Corporation |
| 154 |
F-51202NC-FW-AA |
640 x 480dots; dot size:0.059 x 0.217mm; 0.3-7.0V 20.0mA LCD module |
Optrex Corporation |
| 155 |
F-51320GNF-S-AD |
0.3-7.0V 20.0mA LCD module |
Optrex Corporation |
| 156 |
HMC347 |
GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 157 |
HMC460 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 158 |
HMC462 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 159 |
HMC462LP5 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 160 |
HMC463 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 161 |
HMC463LP5 |
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 162 |
HMC464 |
GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 163 |
HMC464LP5 |
GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz |
Hittite Microwave Corporation |
| 164 |
HMC465 |
GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 165 |
HMC465LP5 |
GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 166 |
HMC547LP3 |
GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz |
Hittite Microwave Corporation |
| 167 |
MA2200-A |
Si planar. Stabilized power supply. Nom zener voltage 20.0 V. |
Panasonic |
| 168 |
MA2200-B |
Si planar. Stabilized power supply. Nom zener voltage 20.0 V. |
Panasonic |
| 169 |
MAS1173ASAA |
IC for 10.00 - 20.00 MHz crystal oscillator |
mas MICRO ANALOG SYSTEMS |
| 170 |
MAS1173ASAA-T |
IC for 10.00 - 20.00 MHz crystal oscillator |
mas MICRO ANALOG SYSTEMS |
| 171 |
MAS1173ATAA |
IC for 10.00 - 20.00 MHz crystal oscillator |
mas MICRO ANALOG SYSTEMS |
| 172 |
MAS1175AASM1-T |
IC for 10.00 - 20.00 MHz VCTCXO |
mas MICRO ANALOG SYSTEMS |
| 173 |
MAS1175ATB1 |
IC for 10.00 - 20.00 MHz VCTCXO |
mas MICRO ANALOG SYSTEMS |
| 174 |
MAS1178 |
IC for 10.00 - 20.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 175 |
MAS1178ATC1 |
IC for 10.00 - 20.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 176 |
MAS1178ATF1 |
IC for 10.00 - 20.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 177 |
MAX20-120.0C |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 178 |
MAX20-120.0C |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 179 |
MAX20-120.0CA |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 180 |
MAX20-120.0CA |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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