No. |
Part Name |
Description |
Manufacturer |
211 |
MMBZ5239B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 9.1 V. Test current 20.0 mA. |
Chenyi Electronics |
212 |
MMBZ5239B |
Surface mount zener diode. Nominal zener voltage 9.1V, test current 20.0mA. |
Jinan Gude Electronic Device |
213 |
MMBZ5240B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA. |
Chenyi Electronics |
214 |
MMBZ5240B |
Surface mount zener diode. Nominal zener voltage 10.0V, test current 20.0mA. |
Jinan Gude Electronic Device |
215 |
MMBZ5241B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 11 V. Test current 20.0 mA. |
Chenyi Electronics |
216 |
MMBZ5241B |
Surface mount zener diode. Nominal zener voltage 11.0V, test current 20.0mA. |
Jinan Gude Electronic Device |
217 |
MMBZ5242B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 12.0 V. Test current 20.0 mA. |
Chenyi Electronics |
218 |
MMBZ5242B |
Surface mount zener diode. Nominal zener voltage 12.0V, test current 20.0mA. |
Jinan Gude Electronic Device |
219 |
MMBZ5250B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 20.0 V. Test current 6.2 mA. |
Chenyi Electronics |
220 |
MMBZ5250B |
Surface mount zener diode. Nominal zener voltage 20.0V, test current 6.2mA. |
Jinan Gude Electronic Device |
221 |
MQF20.0-0300/01 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
222 |
MQF20.0-0500/01 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
223 |
MV1632 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 20.0pF |
Motorola |
224 |
NTE5262AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 20.0V. Zener test current Izt = 630mA. |
NTE Electronics |
225 |
NTE5288AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 120.0V. Zener test current Izt = 100mA. |
NTE Electronics |
226 |
P4SMAJ120-T1 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
227 |
P4SMAJ120-T3 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
228 |
P4SMAJ120A-T1 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
229 |
P4SMAJ120A-T3 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
230 |
P4SMAJ120C-T1 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
231 |
P4SMAJ120C-T3 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
232 |
P4SMAJ120CA-T1 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
233 |
P4SMAJ120CA-T3 |
Reverse stand-off voltage: 120.00V surface mount transient voltage suppressor |
Won-Top Electronics |
234 |
QTM1001A |
7-20.0V; 25mA; charge-transfer sensor module |
Quantum Research Group ltd |
235 |
SA120 |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
236 |
SA120A |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
237 |
SA120C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 120.00 V. Test current IT = 1 mA. |
Bytes |
238 |
SA120CA |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 120.00 V. Test current IT = 1 mA. |
Bytes |
239 |
SB20100CT |
SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere) |
Panjit International Inc |
240 |
SB20100FCT |
ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere) |
Panjit International Inc |
| | | |