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Datasheets for 200=

Datasheets found :: 4106
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No. Part Name Description Manufacturer
151 30KPA200 Diode TVS Single Uni-Dir 260V 30KW 2-Pin New Jersey Semiconductor
152 320PJT200 V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR International Rectifier
153 3425L200 Surface Mount PTC Littelfuse
154 3425L200 SURFACE MOUNT PTC Littelfuse
155 39K200 CPLDs at FPGA DensitiesTM Cypress
156 3D7010-200 Delay 20 +/-2.5 ns, monolithic 10-TAP fixed delay line Data Delay Devices Inc
157 3D7010G-200 Delay 20 +/-2.5 ns, monolithic 10-TAP fixed delay line Data Delay Devices Inc
158 3D7010S-200 Delay 20 +/-2.5 ns, monolithic 10-TAP fixed delay line Data Delay Devices Inc
159 3D7303-200 Delay 200 +/-4 ns, monolithic triple fixed delay line Data Delay Devices Inc
160 3D7303G-200 Delay 200 +/-4 ns, monolithic triple fixed delay line Data Delay Devices Inc
161 3D7303H-200 Delay 200 +/-4 ns, monolithic triple fixed delay line Data Delay Devices Inc
162 3D7303K-200 Delay 200 +/-4 ns, monolithic triple fixed delay line Data Delay Devices Inc
163 3D7303M-200 Delay 200 +/-4 ns, monolithic triple fixed delay line Data Delay Devices Inc
164 3D7303Z-200 Delay 200 +/-4 ns, monolithic triple fixed delay line Data Delay Devices Inc
165 3D7304-200 Delay 200 +/-4 ns, monolithic quadruple fixed delay line Data Delay Devices Inc
166 3D7304D-200 Delay 200 +/-4 ns, monolithic quadruple fixed delay line Data Delay Devices Inc
167 3D7304G-200 Delay 200 +/-4 ns, monolithic quadruple fixed delay line Data Delay Devices Inc
168 3EZ200 Silicon-Power-Z-Diodes (non-planar technology) Diotec Elektronische
169 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) Panjit International Inc
170 3EZ200 200 V, 3 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
171 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE TRSYS
172 3KP200 TRANSIENT VOLTAGE SUPPRESSORS Micro Commercial Components
173 3N200 Silicon dual insulated-gate field-effect transistor. General Electric Solid State
174 3N200 SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR Intersil
175 3N200 Trans MOSFET N-CH 25V 4-Pin TO-72 New Jersey Semiconductor
176 3N200 MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz RCA Solid State
177 400-01 Motorola case, dimensions, similar with TW-200 Motorola
178 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
179 430P104X5200 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay
180 430P104X9200 Metalized Polyester Film Capacitors Wrap-and-Fill Vishay


Datasheets found :: 4106
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