| No. |
Part Name |
Description |
Manufacturer |
| 31 |
100/200 |
100/200 |
Henry Pratt Company |
| 32 |
100/200 |
100/200 |
Henry Pratt Company |
| 33 |
1011LD200 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 34 |
10RM200 |
High Voltage silicon rectifier 20kV |
SESCOSEM |
| 35 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 36 |
14A-200 |
8 Pin Leading & Trailing TTL Active Deleay Line |
Yuan Dean Scientific |
| 37 |
150PFT200 |
V(rrm/drm): 2000V; 800A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 38 |
15FMCJ200 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
| 39 |
15KCD200 |
Transient suppressor CELLULAR DIE PACKAGE |
Microsemi |
| 40 |
15KE200 |
TRANSIENT ABSORPTION ZENER |
Microsemi |
| 41 |
15KE200 |
GPP TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
| 42 |
15KP200 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 43 |
15KP200 |
200V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 44 |
15KP200 |
Transient Voltage Suppressor |
Microsemi |
| 45 |
15KP200 |
Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 46 |
15KP200 |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
Panjit International Inc |
| 47 |
15KPA200 |
Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 48 |
15KPJ200 |
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) |
Panjit International Inc |
| 49 |
15KW200 |
200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 50 |
1812L200 |
Surface Mount PTC |
Littelfuse |
| 51 |
1AZ200 |
ZENER DIODE ( CONSTANT VOLTAGE REGULATION) |
TOSHIBA |
| 52 |
1N1200 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 53 |
1N1200 |
Silicon Rectifier Diode |
Motorola |
| 54 |
1N1200 |
Diode Switching 100V 12A 2-Pin DO-4 |
New Jersey Semiconductor |
| 55 |
1N200 |
Silicon Zener Diode |
Motorola |
| 56 |
1N2200 |
Rectifier Diode |
Motorola |
| 57 |
1N3200 |
Reference Diode |
Motorola |
| 58 |
1N4200 |
Zener Diode 12V 10W |
Motorola |
| 59 |
1N5200 |
Rectifier Diode 400V 2A |
Motorola |
| 60 |
1RM200 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| | | |
