No. |
Part Name |
Description |
Manufacturer |
151 |
F29C51004T70T |
The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
etc |
152 |
F29C51004T70TI |
The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
etc |
153 |
F29C51004T90J |
The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
etc |
154 |
F29C51004T90JI |
The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
etc |
155 |
F29C51004T90P |
The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
etc |
156 |
F29C51004T90PI |
The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
etc |
157 |
F29C51004T90T |
The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
etc |
158 |
F29C51004T90TI |
The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
etc |
159 |
FG-24 |
Flat Package FG24, informations |
Hitachi Semiconductor |
160 |
FM27C512N150 |
524,288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
161 |
FM27C512X120 |
524,288-Bit (64K x 8)High Performance CMOS EPROM |
Fairchild Semiconductor |
162 |
FM27C512X150 |
524,288-Bit (64K x 8)High Performance CMOS EPROM |
Fairchild Semiconductor |
163 |
FM27C512X90 |
524,288-Bit (64K x 8)High Performance CMOS EPROM |
Fairchild Semiconductor |
164 |
FP-24 |
Flat Package FP24, informations |
Hitachi Semiconductor |
165 |
GM72V161621 |
524,288 word x 16 Bit x 2 Bank - SYNCHRONOUS DYNAMIC RAM(SDRAM) |
etc |
166 |
GM72V161621ELT |
524,288 word x 16 Bit x 2 Bank - SYNCHRONOUS DYNAMIC RAM(SDRAM) |
etc |
167 |
HK02 |
Heat sink for BStL24, BStL34, BStL35, BStL37 series |
Siemens |
168 |
HM514800AJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
169 |
HM514800AJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
170 |
HM514800ALJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
171 |
HM514800ALJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
172 |
HM514800ALRR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
173 |
HM514800ALRR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
174 |
HM514800ALTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
175 |
HM514800ALTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
176 |
HM514800ALZ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
177 |
HM514800ALZ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
178 |
HM514800ARR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
179 |
HM514800ARR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
180 |
HM514800ATT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
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