No. |
Part Name |
Description |
Manufacturer |
241 |
HM51S4800CLJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
242 |
HM51S4800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
243 |
HM51S4800CLJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
244 |
HM51S4800CLJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
245 |
HM51S4800CLJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
246 |
HM51S4800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
247 |
HM51S4800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
248 |
HM51S4800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
249 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
250 |
HM51S4800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
251 |
HM51S4800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
252 |
KIM684000-10 |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
253 |
KIM684000-5 |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
254 |
KIM684000-7 |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
255 |
KIM684000-8 |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
256 |
KIM684000L-10 |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
257 |
KIM684000L-10L |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
258 |
KIM684000L-5 |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
259 |
KIM684000L-5L |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
260 |
KIM684000L-7 |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
261 |
KIM684000L-7L |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
262 |
KIM684000L-8 |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
263 |
KIM684000L-8L |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
264 |
KM684000LI |
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
265 |
KM684000LI-10 |
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
266 |
KM684000LI-10L |
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
267 |
KM684000LI-7 |
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
268 |
KM684000LI-7L |
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
269 |
KM684000LI-8 |
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
270 |
KM684000LI-8L |
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
| | | |