No. |
Part Name |
Description |
Manufacturer |
151 |
EVAL-AD9833EB |
+2.5 V to +5.5 V, 25 MHz Low Power CMOS Complete DDS |
Analog Devices |
152 |
GLT5160L16-8TC |
125 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM |
G-LINK Technology |
153 |
HD6801S5P |
0.3-7 V, 1.25 MHz, CMOS microcomputer unit |
Hitachi Semiconductor |
154 |
HD6801V5P |
0.3-7 V, 1.25 MHz, CMOS microcomputer unit |
Hitachi Semiconductor |
155 |
HD6803-1 |
0.3-7 V, 1.25 MHz, 8-bit micro processing unit |
Hitachi Semiconductor |
156 |
HM5425161B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
157 |
HM5425161BTT-10 |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
158 |
HM5425161BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
159 |
HM5425161BTT-75B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
160 |
HM5425401B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
161 |
HM5425401BTT-10 |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
162 |
HM5425401BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
163 |
HM5425401BTT-75B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
164 |
HM5425801B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
165 |
HM5425801BTT-10 |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
166 |
HM5425801BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
167 |
HM5425801BTT-75B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
168 |
HY57V641620HGLT-8 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 125 MHz |
Hynix Semiconductor |
169 |
IMIZ9972BA |
Output frequency up to 125 MHz |
Cypress |
170 |
IMIZ9973BAT |
3.3V, 125 MHz, multi-output zero delay buffer. |
Cypress |
171 |
IS61C632A-4PQ |
4ns; 125 MHz; 32 x 32 synchronous pipelined static RAM |
ICSI |
172 |
IS61C632A-4TQ |
4ns; 125 MHz; 32 x 32 synchronous pipelined static RAM |
ICSI |
173 |
ISPLS1016EA-125LJ44 |
125 MHz in-system prommable high density PLD |
Lattice Semiconductor |
174 |
ISPLS1016EA-125LT44 |
125 MHz in-system prommable high density PLD |
Lattice Semiconductor |
175 |
ISPLS1024-125LT100 |
125 MHz in-system prommable high density PLD |
Lattice Semiconductor |
176 |
ISPLS1032EA-125LT100 |
125 MHz in-system prommable high density PLD |
Lattice Semiconductor |
177 |
ISPLSI2032VE-225LB44 |
225 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
178 |
ISPLSI2192VE-225LB144 |
225 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
179 |
ISPLSI2192VE-225LT128 |
225 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
180 |
ISPLSI5256VE-125LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
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