No. |
Part Name |
Description |
Manufacturer |
181 |
ISPLSI5256VE-125LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
182 |
ISPLSI5256VE-125LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
183 |
ISPLSI5256VE-125LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
184 |
ISPLSI5256VE-125LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
185 |
ISPLSI5256VE-125LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
186 |
ISPLSI5256VE-125LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
187 |
ISPLSI5256VE-125LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
188 |
ISPLSI5512VE-125LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
189 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
190 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
191 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
192 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
193 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
194 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
195 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
196 |
KM44S3203BT-G_F8 |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). |
Samsung Electronic |
197 |
KMM366S1623BT-G8 |
PC100 SDRAM module. 125 MHz, 8 ns speed |
Samsung Electronic |
198 |
KU80C186EC25 |
16-bit high-integration embedded processor. 25 MHz, 5 V |
Intel |
199 |
KU80C188EC25 |
16-bit high-integration embedded processor. 25 MHz, 5 V |
Intel |
200 |
M25P05-A |
512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
SGS Thomson Microelectronics |
201 |
M25P05-A |
512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
ST Microelectronics |
202 |
M25P05-AV |
512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
SGS Thomson Microelectronics |
203 |
M25P05-AV |
512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
ST Microelectronics |
204 |
M25P10-A |
1 MBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
SGS Thomson Microelectronics |
205 |
M25P10-A |
1 MBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
ST Microelectronics |
206 |
M25P10-AV |
1 MBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
SGS Thomson Microelectronics |
207 |
M25P10-AV |
1 MBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
ST Microelectronics |
208 |
M25P20 |
2 MBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
SGS Thomson Microelectronics |
209 |
M25P20 |
2 MBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
ST Microelectronics |
210 |
M25P20-V |
2 MBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE |
SGS Thomson Microelectronics |
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