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Datasheets for 25V

Datasheets found :: 2734
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 2N3702 0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE Continental Device India Limited
152 2N3702 Trans GP BJT PNP 25V 3-Pin TO-92 Box New Jersey Semiconductor
153 2N3738 Trans GP BJT NPN 225V 1A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
154 2N4124 Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. General Electric Solid State
155 2N4124 Trans GP BJT NPN 25V 0.2A 3-Pin TO-92 Box New Jersey Semiconductor
156 2N4124 General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
157 2N4126 Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. General Electric Solid State
158 2N4126 Trans GP BJT PNP 25V 0.2A 3-Pin TO-92 Box New Jersey Semiconductor
159 2N4126 Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
160 2N4126 Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
161 2N4351 Trans MOSFET N-CH 25V 0.1A 4-Pin TO-72 New Jersey Semiconductor
162 2N4352 Trans MOSFET N-CH 25V 0.1A 4-Pin TO-72 New Jersey Semiconductor
163 2N5050 Trans GP BJT NPN 125V 2A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
164 2N5060 Silicon Controlled Rectifier .8A 25V ON Semiconductor
165 2N5060RLRA Silicon Controlled Rectifier .8A 25V ON Semiconductor
166 2N5060RLRM Silicon Controlled Rectifier .8A 25V ON Semiconductor
167 2N5089 0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE Continental Device India Limited
168 2N5089 Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Box New Jersey Semiconductor
169 2N5089 Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
170 2N5172 0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE Continental Device India Limited
171 2N5172 NPN silicon transistor. 25V, 100mA. General Electric Solid State
172 2N5220 Trans GP BJT PNP 25V 3-Pin TO-92 Box New Jersey Semiconductor
173 2N5225 Trans GP BJT NPN 25V 3-Pin TO-92 Box New Jersey Semiconductor
174 2N5226 Trans GP BJT PNP 25V 3-Pin TO-92 Box New Jersey Semiconductor
175 2N5229 Trans GP BJT PNP 25V 3-Pin TO-92 Box New Jersey Semiconductor
176 2N5306 Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. General Electric Solid State
177 2N5457 Trans JFET N-CH 25V Si 3-Pin TO-92 New Jersey Semiconductor
178 2N5458 Trans JFET N-CH 25V Si 3-Pin TO-92 New Jersey Semiconductor
179 2N5459 Trans JFET N-CH 25V Si 3-Pin TO-92 New Jersey Semiconductor
180 2N5809 Trans GP BJT NPN 225V 5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor


Datasheets found :: 2734
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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