No. |
Part Name |
Description |
Manufacturer |
151 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
152 |
2N3702 |
Trans GP BJT PNP 25V 3-Pin TO-92 Box |
New Jersey Semiconductor |
153 |
2N3738 |
Trans GP BJT NPN 225V 1A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
154 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
155 |
2N4124 |
Trans GP BJT NPN 25V 0.2A 3-Pin TO-92 Box |
New Jersey Semiconductor |
156 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
157 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
158 |
2N4126 |
Trans GP BJT PNP 25V 0.2A 3-Pin TO-92 Box |
New Jersey Semiconductor |
159 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
160 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
161 |
2N4351 |
Trans MOSFET N-CH 25V 0.1A 4-Pin TO-72 |
New Jersey Semiconductor |
162 |
2N4352 |
Trans MOSFET N-CH 25V 0.1A 4-Pin TO-72 |
New Jersey Semiconductor |
163 |
2N5050 |
Trans GP BJT NPN 125V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
164 |
2N5060 |
Silicon Controlled Rectifier .8A 25V |
ON Semiconductor |
165 |
2N5060RLRA |
Silicon Controlled Rectifier .8A 25V |
ON Semiconductor |
166 |
2N5060RLRM |
Silicon Controlled Rectifier .8A 25V |
ON Semiconductor |
167 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
168 |
2N5089 |
Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Box |
New Jersey Semiconductor |
169 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
170 |
2N5172 |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE |
Continental Device India Limited |
171 |
2N5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
172 |
2N5220 |
Trans GP BJT PNP 25V 3-Pin TO-92 Box |
New Jersey Semiconductor |
173 |
2N5225 |
Trans GP BJT NPN 25V 3-Pin TO-92 Box |
New Jersey Semiconductor |
174 |
2N5226 |
Trans GP BJT PNP 25V 3-Pin TO-92 Box |
New Jersey Semiconductor |
175 |
2N5229 |
Trans GP BJT PNP 25V 3-Pin TO-92 Box |
New Jersey Semiconductor |
176 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
177 |
2N5457 |
Trans JFET N-CH 25V Si 3-Pin TO-92 |
New Jersey Semiconductor |
178 |
2N5458 |
Trans JFET N-CH 25V Si 3-Pin TO-92 |
New Jersey Semiconductor |
179 |
2N5459 |
Trans JFET N-CH 25V Si 3-Pin TO-92 |
New Jersey Semiconductor |
180 |
2N5809 |
Trans GP BJT NPN 225V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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