No. |
Part Name |
Description |
Manufacturer |
211 |
2SB564 |
Trans GP BJT PNP 25V 1A 3-Pin SP-8 |
New Jersey Semiconductor |
212 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
213 |
2SB632 |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
214 |
2SB632K |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
215 |
2SC1324 |
Trans GP BJT NPN 25V 0.15A 3-Pin Case T-8 |
New Jersey Semiconductor |
216 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
217 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
218 |
2SC3246 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 |
Isahaya Electronics Corporation |
219 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
220 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
221 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
222 |
2SD1797 |
Trans Darlington NPN 25V 3A 3-Pin (3+Tab) TP |
New Jersey Semiconductor |
223 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
224 |
2SD612 |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
225 |
2SD612K |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
226 |
2SD894 |
NPN Epitaxial Planar Silicon Transistor 25V/1.5A Driver Applications |
SANYO |
227 |
3N140 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
228 |
3N155 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
229 |
3N156 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
230 |
3N170 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
231 |
3N171 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
232 |
3N172 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
233 |
3N173 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
234 |
3N187 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
235 |
3N188 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
236 |
3N189 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
237 |
3N200 |
Trans MOSFET N-CH 25V 4-Pin TO-72 |
New Jersey Semiconductor |
238 |
3N201 |
Trans MOSFET N-CH 25V 4-Pin TO-72 |
New Jersey Semiconductor |
239 |
3N202 |
Trans MOSFET N-CH 25V |
New Jersey Semiconductor |
240 |
3N203 |
Trans MOSFET N-CH 25V |
New Jersey Semiconductor |
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