| No. |
Part Name |
Description |
Manufacturer |
| 151 |
DSC1103AI2-130.0000T |
Clock and Timing - Oscillators |
Microchip |
| 152 |
DSC1121AM1-030.0000T |
Clock and Timing - Oscillators |
Microchip |
| 153 |
DSC1121BM1-030.0000 |
Clock and Timing - Oscillators |
Microchip |
| 154 |
DSC1121BM1-030.0000T |
Clock and Timing - Oscillators |
Microchip |
| 155 |
DSC1121CI2-030.0000T |
Clock and Timing - Oscillators |
Microchip |
| 156 |
E2502H59 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1530.37 nm. Frequency 195.9 THz. |
Agere Systems |
| 157 |
GMA8275C |
1.2 INCH (30.5 mm) 5x7 DOT MATRIX STICK DISPLAY |
Fairchild Semiconductor |
| 158 |
GMC8275C |
1.2 INCH (30.5 mm) 5x7 DOT MATRIX STICK DISPLAY |
Fairchild Semiconductor |
| 159 |
HER3001 |
30.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 160 |
HER3002 |
30.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 161 |
HER3003 |
30.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 162 |
HER3004 |
30.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 163 |
HER3005 |
30.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 164 |
HER3006 |
30.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 165 |
IMC-2220 |
Inductors, Surface Mount, Molded |
Vishay |
| 166 |
IMCH-1812 |
Surface Mount, High Current Molded Inductors |
Vishay |
| 167 |
MAS1174 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 168 |
MAS1174AC1 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 169 |
MAS9271ATB1 |
IC for 10.00 - 30.00 MHz PXO |
mas MICRO ANALOG SYSTEMS |
| 170 |
MAS9271ATG1 |
IC for 10.00 - 30.00 MHz PXO |
mas MICRO ANALOG SYSTEMS |
| 171 |
MAS9275 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 172 |
MAS9275ATC1 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 173 |
MAS9275ATG1 |
IC for 10.00 - 30.00 MHz VCXO |
mas MICRO ANALOG SYSTEMS |
| 174 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 175 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 176 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 177 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 178 |
MAX40-130.0C |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 179 |
MAX40-130.0C |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 180 |
MAX40-130.0CA |
130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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