| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 32 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 33 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 34 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 35 |
5KP130 |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 36 |
5KP130A |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 37 |
AR3007S30 |
3000 V, 2300 A, 30.2 kA rectifier diode |
POSEICO SPA |
| 38 |
AR3008S30 |
3000 V, 2700 A, 30.2 kA rectifier diode |
POSEICO SPA |
| 39 |
ATF-58143 |
ATF-58143 · Single Voltage E-pHEMT Low Noise +30.5 dBm OIP3 in SC-70 |
Agilent (Hewlett-Packard) |
| 40 |
ATV15CJ360A-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=30.8V, Tolerance=10% |
Comchip Technology |
| 41 |
ATV15CJ360CA-G |
Transient Voltage Suppressor (TVS), PPPM=1500Watts, VRWM=30.8V, Tolerance=5% |
Comchip Technology |
| 42 |
BC170A |
Si-PLANAR-npn TRANSISTOR h21E=β=30...100 at 1mA |
IPRS Baneasa |
| 43 |
BD175 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
| 44 |
BD175-10 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 45 |
BD175-16 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 250 hFE. |
Continental Device India Limited |
| 46 |
BD175-6 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 47 |
BD176 |
30.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
| 48 |
BD176-10 |
30.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 49 |
BD176-16 |
30.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 250 hFE. |
Continental Device India Limited |
| 50 |
BD176-6 |
30.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 51 |
BD177 |
30.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
| 52 |
BD177-10 |
30.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 53 |
BD177-6 |
30.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 54 |
BD178 |
30.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
| 55 |
BD178-10 |
30.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 56 |
BD178-6 |
30.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 57 |
BD179 |
30.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
| 58 |
BD179-10 |
30.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
| 59 |
BD179-6 |
30.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
| 60 |
BD180 |
30.000W Switching PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
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