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Datasheets for 50 OHM

Datasheets found :: 297
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 IRFP340 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Intersil
152 IRFP440 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Fairchild Semiconductor
153 IRFP440 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Intersil
154 IRFP9150 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET Fairchild Semiconductor
155 JANSR2N7398 2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil
156 M2001H Adjustable Carbon Attenuator, Power rating .25 watt, Temperature limits -25 degrees C to 70 degrees C, Impedance 75 ohms, 50 ohms, 60 ohms on request Vishay
157 M9130 6A / -100V / 0.550 Ohm / Rad Hard / P-Channel Power MOSFETs Intersil
158 MAX4731EBL+ 50 Ohm, Dual SPST Analog Switches in UCSP MAXIM - Dallas Semiconductor
159 MAX4731EBL+T 50 Ohm, Dual SPST Analog Switches in UCSP MAXIM - Dallas Semiconductor
160 MAX4731EUA+ 50 Ohm, Dual SPST Analog Switches in UCSP MAXIM - Dallas Semiconductor
161 MAX4731EUA+T 50 Ohm, Dual SPST Analog Switches in UCSP MAXIM - Dallas Semiconductor
162 MAX4732EUA+ 50 Ohm, Dual SPST Analog Switches in UCSP MAXIM - Dallas Semiconductor
163 MAX4732EUA+T 50 Ohm, Dual SPST Analog Switches in UCSP MAXIM - Dallas Semiconductor
164 MAX4733EUA+ 50 Ohm, Dual SPST Analog Switches in UCSP MAXIM - Dallas Semiconductor
165 MAX4733EUA+T 50 Ohm, Dual SPST Analog Switches in UCSP MAXIM - Dallas Semiconductor
166 MTD5P06V TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM Motorola
167 MTE30N50E TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM Motorola
168 MTP30N06VL TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM Motorola
169 MTP5P06V TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM Motorola
170 MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM Motorola
171 NDF08N50Z Power MOSFET 500V 0.850 Ohm Single N-Channel ON Semiconductor
172 NDF10N62Z Power MOSFET 620V 0.750 Ohm Single N-Channel ON Semiconductor
173 NGA-186 DC-6000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. 12.0dB gain, 14.7 dBmP1dB at 1950MHz. Stanford Microdevices
174 NGA-286 DC-6000 MHz, cascadable 50 ohm (1.3:1 VSWR) GaAs HBT MMIC amplifier. High gain: 14.8 at 1950MHz. Stanford Microdevices
175 NGA-386 DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz. Stanford Microdevices
176 NGA-489 0.5-10 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 14.5 dB at 1950MHz. Stanford Microdevices
177 NGA-589 DC-5.5 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 19.2 dB at 1950MHz. Stanford Microdevices
178 NGA-686 DC-6000 MHz, cascadable 50 ohm GaAs HBT MMIC amplifier. 11.4dB gain, 19.2 dBm P1dB at 1950MHz. Stanford Microdevices
179 NGA-689 DC-5000 MHz, cascadable 50 ohm(1.4:1 VSRM) GaAs HBT MMIC amplifier. 11.7dB gain, 18.9 dBm P1dB at 1950MHz. Stanford Microdevices
180 Notch/Band Reject Filter Center frequency 840 MHz, Poles 4, Bandwidth 4 MHz, Impedance 50 Ohms Skyworks Solutions


Datasheets found :: 297
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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