| No. |
Part Name |
Description |
Manufacturer |
| 271 |
STB19NB20 |
N-CHANNEL 200V - 0.150 OHM - 19A D2PAK POWERMESH MOSFET |
ST Microelectronics |
| 272 |
STB19NB20T4 |
N-CHANNEL 200V - 0.150 OHM - 19A D2PAK POWERMESH MOSFET |
ST Microelectronics |
| 273 |
STB21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in D2PAK |
ST Microelectronics |
| 274 |
STB23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK |
ST Microelectronics |
| 275 |
STD18N55M5 |
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in DPAK package |
ST Microelectronics |
| 276 |
STE70NM60 |
N-CHANNEL 600V - 0.050 OHM - 70A ISOTOP ZENER-PROTECTED MDMESH POWERMOSFET |
ST Microelectronics |
| 277 |
STF18N55M5 |
N-channel 550 V, 0.150 Ohm, 16 A, MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
| 278 |
STF21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220FP |
ST Microelectronics |
| 279 |
STF23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP |
ST Microelectronics |
| 280 |
STI21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in I2PAK |
ST Microelectronics |
| 281 |
STP18N55M5 |
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
| 282 |
STP21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220 |
ST Microelectronics |
| 283 |
STP23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-220 |
ST Microelectronics |
| 284 |
STS3C3F30L |
N-CHANNEL 30V - 0.050 OHM -3.5A P-CHANNEL 30V - 0.140 OHM - 3A SO-8 STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 285 |
STS3C3F30L |
N-CHANNEL 30V - 0.050 OHM -3.5A P-CHANNEL 30V - 0.140 OHM - 3A SO-8 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 286 |
STW21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247 |
ST Microelectronics |
| 287 |
STW23NM60ND |
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-247 |
ST Microelectronics |
| 288 |
STY60NM60 |
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
SGS Thomson Microelectronics |
| 289 |
STY60NM60 |
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET |
ST Microelectronics |
| 290 |
SXL-189-EB |
800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance: +42dBm typ. at 900 MHz. Eval board. |
Stanford Microdevices |
| 291 |
SXL-208-BLK |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: +46dBm typ. at 900 MHz. Devices per reel 100/TRAY. |
Stanford Microdevices |
| 292 |
SXL-208-TR1 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: +46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7 |
Stanford Microdevices |
| 293 |
SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: +46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13 |
Stanford Microdevices |
| 294 |
SXL-316-BLK |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 100/TRAY. |
Stanford Microdevices |
| 295 |
SXL-316-TR2 |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 1000. Reel size 13 |
Stanford Microdevices |
| 296 |
TGF2965-SM |
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor |
Qorvo |
| 297 |
TGF3020-SM |
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor |
Qorvo |
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