No. |
Part Name |
Description |
Manufacturer |
151 |
2N6253 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
152 |
2N6253 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
153 |
2N6254 |
Silicon Transistors |
Advanced Semiconductor |
154 |
2N6254 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
155 |
2N6254 |
80V high power silicon NPN transistor |
Comset Semiconductors |
156 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
157 |
2N6254 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
158 |
2N6254 |
Trans GP BJT NPN 80V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
159 |
2N6254 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
160 |
2N6255 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
161 |
2N6257 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
162 |
2N6257 |
High-Power NPN Silicon Transistor |
Motorola |
163 |
2N6257 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
164 |
2N6257 |
Silicon NPN Power Transistor, TO-3 package |
Silicon Transistor Corporation |
165 |
2N6257 |
TO-3 Power Package Transistors (NPN) |
Unknow |
166 |
2N6258 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
167 |
2N6258 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
168 |
2N6258 |
Silicon NPN Power Transistor, TO-3 package |
Silicon Transistor Corporation |
169 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
170 |
2N6259 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
171 |
2N6259 |
POWER TRANSISTORS(16A,150V,150W) |
MOSPEC Semiconductor |
172 |
2N6259 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
173 |
2N6259 |
Silicon NPN Power Transistor, TO-3 package |
Silicon Transistor Corporation |
174 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
175 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
176 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
177 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
178 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
179 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
180 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| | | |