| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 182 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 183 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 184 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 185 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 186 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 187 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 188 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 189 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 190 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 191 |
2SA1625 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 192 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 193 |
2SA1625-T |
Silicon transistor |
NEC |
| 194 |
2SA1625-T/JD |
Silicon transistor |
NEC |
| 195 |
2SA1625-T/JM |
Silicon transistor |
NEC |
| 196 |
2SA1625/JD |
Silicon transistor |
NEC |
| 197 |
2SA1625/JM |
Silicon transistor |
NEC |
| 198 |
2SB1625 |
Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose) |
Sanken |
| 199 |
2SB1625 |
Silicon PNP Darlington Power Transistors TO-3PML package |
Savantic |
| 200 |
2SC1625 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 201 |
2SC1625 |
SILICON NPN PLANAR TYPE |
TOSHIBA |
| 202 |
2SC2625 |
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |
Fuji Electric |
| 203 |
2SC2625 |
POWER TRANSISTORS(10A,400V,80W) |
MOSPEC Semiconductor |
| 204 |
2SC2625 |
Trans GP BJT NPN 400V 10A 3-Pin(3+Tab) TO-3P |
New Jersey Semiconductor |
| 205 |
2SC2625 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 206 |
2SC3625 |
8A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
| 207 |
2SC5625 |
SILICON EPITAXIAL |
Isahaya Electronics Corporation |
| 208 |
2SD1625 |
NPN Epitaxial Planar Silicon Transistors Driver Applications |
SANYO |
| 209 |
2SJ625 |
Pch enhancement type MOS FET |
NEC |
| 210 |
2SJ625-T1B |
Pch enhancement type MOS FET |
NEC |
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