| No. |
Part Name |
Description |
Manufacturer |
| 151 |
RCA9202C |
4A N-P-N darlington power transistor. 400V, 65W. |
General Electric Solid State |
| 152 |
S54165W |
Parallel-Load 8-Bit shift register |
Signetics |
| 153 |
SAA7165WP |
Video enhancement and digital-to-analog processor (VEDA2). |
Philips |
| 154 |
SGSIF461 |
65W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS |
SGS Thomson Microelectronics |
| 155 |
SN54165W |
PARALLEL-LOAD 8-BIT SHIFT REGISTERS |
Texas Instruments |
| 156 |
SN54HC165W |
8-BIT PARALLEL-LOAD SHIFT REGISTERS |
Texas Instruments |
| 157 |
SN54HC365W |
HEX BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS |
Texas Instruments |
| 158 |
SN54S65W |
4-2-3-2 INPUT AND-OR-INVERT GATES |
Texas Instruments |
| 159 |
SNJ54ALS165W |
PARALLEL-LOAD 8-BIT REGISTERS |
Texas Instruments |
| 160 |
SNJ54HC165W |
Parallel-Load 8-Bit Shift Registers |
Texas Instruments |
| 161 |
STS3DPFS30 |
P - CHANNEL 30V - 0.065W - 3A - S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 162 |
TAA765W |
Operational Amplifier |
Siemens |
| 163 |
TAA765W |
Operational Amplifier |
Siemens |
| 164 |
TAA765W |
Operational amplifier plastic miniature housing |
Siemens |
| 165 |
TAA865W |
Operational Amplifier |
Siemens |
| 166 |
TAA865W |
Operational Amplifier |
Siemens |
| 167 |
TAA865W |
Operational amplifier with 70mA drive current |
Siemens |
| 168 |
TBA790X |
AF amplifier 0.65W |
SESCOSEM |
| 169 |
TIP120 |
8A N-P-N darlington power transistor. 60V, 65W. |
General Electric Solid State |
| 170 |
TIP120 |
POWER TRANSISTORS(5.0A,60-100V,65W) |
MOSPEC Semiconductor |
| 171 |
TIP120 |
NPN Silicon Power Transistor 65W |
National Semiconductor |
| 172 |
TIP121 |
8A N-P-N darlington power transistor. 80V, 65W. |
General Electric Solid State |
| 173 |
TIP121 |
POWER TRANSISTORS(5.0A,60-100V,65W) |
MOSPEC Semiconductor |
| 174 |
TIP121 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 175 |
TIP122 |
8A N-P-N darlington power transistor. 100V, 65W. |
General Electric Solid State |
| 176 |
TIP122 |
POWER TRANSISTORS(5.0A,60-100V,65W) |
MOSPEC Semiconductor |
| 177 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 178 |
TIP125 |
8A P-N-P darlington power transistor. -60V, 65W. |
General Electric Solid State |
| 179 |
TIP125 |
POWER TRANSISTORS(5.0A,60-100V,65W) |
MOSPEC Semiconductor |
| 180 |
TIP125 |
PNP Silicon Power Transistor 65W |
National Semiconductor |
| | | |
